One-dimensional defects in graphene have a strong influence on its physical properties, such as electrical charge transport and mechanical strength. With enhanced chemical reactivity, such defects may also allow us to selectively functionalize the material and systematically tune the properties of graphene. Here we demonstrate the selective deposition of metal at chemical vapour deposited graphene's line defects, notably grain boundaries, by atomic layer deposition. Atomic layer deposition allows us to deposit Pt predominantly on graphene's grain boundaries, folds and cracks due to the enhanced chemical reactivity of these line defects, which is directly confirmed by transmission electron microscopy imaging. The selective functionalization of graphene defect sites, together with the nanowire morphology of deposited Pt, yields a superior platform for sensing applications. Using Pt-graphene hybrid structures, we demonstrate high-performance hydrogen gas sensors at room temperature and show its advantages over other evaporative Pt deposition methods, in which Pt decorates the graphene surface non-selectively.
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http://dx.doi.org/10.1038/ncomms5781 | DOI Listing |
Talanta
December 2024
Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, 130012, PR China. Electronic address:
Humidity-responsive actuators (HRA) have garnered significant interest across various domains. Since 2020, MXene have been extensively studied for their potential in HRA, demonstrating remarkable performance. Thus far, more than 70 MXene materials have been found.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, Jiangsu 215006, China.
The solid-electrolyte interphase (SEI) strongly determines the stability and reversibility of aqueous Zn-ion batteries (AZIBs). In traditional electrolytes, the nonuniform SEI layer induced by severe parasitic reactions, such as the hydrogen evolution reaction (HER), will exacerbate the side reactions on Zn anodes, thus leading to low zinc utilization ratios (ZURs). Herein, we propose to use methoxy ethylamine (MOEA) as a nucleophilic additive, which has a stronger nucleophilic characteristic than water, with the advantage of an abundance of nucleophilic atoms.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials Science and Engineering, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University, Tianjin 300350, China.
For silicon-based devices using dielectric oxides doped with rare earth ions, their electroluminescence (EL) performance relies on the sufficient carrier injection. In this work, the atomic GaO layers are inserted within the Er-doped GeO nanofilms fabricated by atomic layer deposition (ALD). Both Ga(CH) and Ga(CH) could realize the ALD growth of GaO onto the as-deposited GeO nanofilm with unaffected deposition rates.
View Article and Find Full Text PDFSci Rep
January 2025
Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, Pardubice, 532 10, Czech Republic.
Radio frequency magnetron co-sputtering method employing GeTe and Sc targets was exploited for the deposition of Sc doped GeTe thin films. Different characterization techniques (scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction, atomic force microscopy, sheet resistance temperature-dependent measurements, variable angle spectroscopic ellipsometry, and laser ablation time-of-flight mass spectrometry) were used to evaluate the properties of as-deposited (amorphous) and annealed (crystalline) Ge-Te-Sc thin films. Prepared amorphous thin films have GeTe, GeTeSc, GeTeSc, GeTeSc and GeTeSc chemical composition.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
Institute of Molecular Science, University of Valencia, Catedratico Jose Beltrán 2, 46980 Paterna, Spain.
The role of self-intercalation in 2D van der Waals materials is key to the understanding of many of their properties. Here we show that the magnetic ordering temperature of thin films of the 2D ferromagnet Fe_{5}GeTe_{2} is substantially increased by self-intercalated Fe that resides in the van der Waals gaps. The epitaxial films were prepared by molecular beam epitaxy and their magnetic properties explored by element-specific x-ray magnetic circular dichroism that showed ferromagnetic ordering up to 375 K.
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