AI Article Synopsis
- The study focuses on the field electron emission performance of molybdenum disulfide (MoS2) thin films created through pulsed laser deposition (PLD) on tungsten (W) tips and silicon (Si) substrates.
- The dense nanostructured morphology of the MoS2 films enhances electric field effects, with the Si-based film achieving a turn-on field of 2.8 V/μm for a specific emission current density, while the W tip emitter reached a much higher current density at a lower voltage.
- Additionally, MoS2 films on flexible kapton substrates demonstrate good photoresponse characteristics, suggesting potential applications in field emission and advanced nanoelectronic devices.
Article Abstract
We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 μA/cm(2) is found to be 2.8 V/μm. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of ∼30 mA/cm(2) at a relatively lower applied voltage of ∼3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLD-MoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.
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| http://dx.doi.org/10.1021/am503464h | DOI Listing |
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