A combined chemical pressure and substrate biaxial pressure crystal engineering approach was demonstrated for producing highly epitaxial Sm-doped BiMnO(3) (BSMO) films on SrTiO(3) single crystal substrates, with enhanced magnetic transition temperatures, TC up to as high as 140 K, 40 K higher than that for standard BiMnO(3) (BMO) films. Strong room temperature ferroelectricity with piezoresponse amplitude, d(33) = 10 pm/V, and long-term retention of polarization were also observed. Furthermore, the BSMO films were much easier to grow than pure BMO films, with excellent phase purity over a wide growth window. The work represents a very effective way to independently control strain in-plane and out-of-plane, which is important not just for BMO but for controlling the properties of many other strongly correlated oxides.
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| http://dx.doi.org/10.1021/am501351c | DOI Listing |
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Department of Materials Science, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, U.K.
A combined chemical pressure and substrate biaxial pressure crystal engineering approach was demonstrated for producing highly epitaxial Sm-doped BiMnO(3) (BSMO) films on SrTiO(3) single crystal substrates, with enhanced magnetic transition temperatures, TC up to as high as 140 K, 40 K higher than that for standard BiMnO(3) (BMO) films. Strong room temperature ferroelectricity with piezoresponse amplitude, d(33) = 10 pm/V, and long-term retention of polarization were also observed. Furthermore, the BSMO films were much easier to grow than pure BMO films, with excellent phase purity over a wide growth window.
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