We describe the characterization of a monolithically integrated photonic device for short pulse generation featuring a mode-locked laser diode, a Mach-Zehnder modulator (MZM), and a semiconductor optical amplifier (SOA). The integrated device is designed for fabrication by a generic foundry scheme with a view to ease of design, testing, and manufacture. Trains of 6.8 ps pulses are generated at repetition rates that are electronically switchable from 14 GHz to 109 MHz. The SOA boosts the peak power by 7.4 dB, and the pulses are compressible to 2.4 ps by dispersion compensation using single-mode telecommunications fiber.
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http://dx.doi.org/10.1364/OL.39.004144 | DOI Listing |
Microsyst Nanoeng
January 2025
State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, 518060, Shenzhen, China.
We present a system-level model with an on-chip temperature compensation technique for a CMOS-MEMS monolithic calorimetric flow sensing SoC. The model encompasses mechanical, thermal, and electrical domains to facilitate the co-design of a MEMS sensor and CMOS interface circuits on the EDA platform. The compensation strategy is implemented on-chip with a variable temperature difference heating circuit.
View Article and Find Full Text PDFWater Res X
May 2025
Integrated Science and Technology Research Center, Faculty of Technology and Environment, Prince of Songkla University, Phuket Campus, Kathu, Phuket 83120 Thailand.
This study rigorously evaluates the adsorption performance of the Cry-Ca-COS monolith for phosphate removal in a column operation mode. Characterization of the material both before and after exhaustion in a continuous flow system (column form) showed no difference compared to results from a batch system (tablet form). The XPS results indicated that the adsorption mechanism of phosphate on the Cry-Ca-COS column involved surface microprecipitation and ligand exchange (inner-sphere complexation).
View Article and Find Full Text PDFSensors (Basel)
January 2025
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Short-wave infrared (SWIR) imaging has a wide range of applications in civil and military fields. Over the past two decades, significant efforts have been devoted to developing high-resolution, high-sensitivity, and cost-effective SWIR sensors covering the spectral range from 0.9 μm to 3 μm.
View Article and Find Full Text PDFAdv Sci (Weinh)
January 2025
College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310058, China.
Photonic manipulation of large-capacity data with the advantages of high speed and low power consumption is a promising solution for explosive growth demands in the era of post-Moore. A well-developed lithium-niobate-on-insulator (LNOI) platform has been widely explored for high-performance electro-optic (EO) modulators to bridge electrical and optical signals. However, the photonic waveguides on the x-cut LNOI platform suffer serious polarization-mode conversion/coupling issues because of strong birefringence, making it hard to realize large-scale integration.
View Article and Find Full Text PDFNpj Flex Electron
October 2024
Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA.
The integration of flexible electronics and photonics has the potential to create revolutionary technologies, yet it has been challenging to marry electronic and photonic components on a single polymer device, especially through high-volume manufacturing. Here, we present a robust, chiplet-level heterogeneous integration of polymer-based circuits (CHIP), where several post-fabricated, ultrathin, polymer electronic, and optoelectronic chiplets are vertically bonded into one single chip at room temperature and then shaped into application-specific form factors with monolithic Input/Output (I/O). As a demonstration, we applied this process and developed a flexible 3D-integrated optrode with high-density arrays of microelectrodes for electrical recording and micro light-emitting diodes (μLEDs) for optogenetic stimulation while with unprecedented integration of additional temperature sensors for bio-safe operations and shielding designs for optoelectronic artifact prevention.
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