Enhancing the brightness of Si nanocrystal light-emitting devices with electro-excited surface plasmons.

Nanotechnology

Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, People's Republic of China. School of Information Engineering, Guizhou Min Zu University, Guiyang 550025, People's Republic of China.

Published: September 2014

The use of electro-excited surface plasmons (SPs) in Ag nanoparticles (Ag-NPs) is shown to enhance the brightness of Si nanocrystal light-emitting devices (Si-NC LEDs). The Ag-NPs are prepared on the Si-NC thin film by ultrasonic irradiation and postannealing treatments. Electro-excited SPs on Ag-NPs are found, which are induced by electron impact on Ag-NPs and the front electrode Al layer during the charge injection process of LED. The electro-excited SPs enhance the electroluminescence of Si-NC, or LED brightness, via the SP field coupling to the exciton dipole moment of Si-NC. A maximal 5.2-fold brightness enhancement of Si-NC LED is achieved at the postannealing temperature of 200 °C. Remnant far-field radiations arising from electro-excited SPs are detected, which further supports the existence of such SPs.

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http://dx.doi.org/10.1088/0957-4484/25/35/355203DOI Listing

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Enhancing the brightness of Si nanocrystal light-emitting devices with electro-excited surface plasmons.

Nanotechnology

September 2014

Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, People's Republic of China. School of Information Engineering, Guizhou Min Zu University, Guiyang 550025, People's Republic of China.

The use of electro-excited surface plasmons (SPs) in Ag nanoparticles (Ag-NPs) is shown to enhance the brightness of Si nanocrystal light-emitting devices (Si-NC LEDs). The Ag-NPs are prepared on the Si-NC thin film by ultrasonic irradiation and postannealing treatments. Electro-excited SPs on Ag-NPs are found, which are induced by electron impact on Ag-NPs and the front electrode Al layer during the charge injection process of LED.

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