The extraordinary permeability and manufacturability of ultrathin silicon-based membranes are enabling devices with improved performance and smaller sizes in such important areas as molecular filtration and sensing, cell culture, electroosmotic pumping, and hemodialysis. Because of the robust chemical and mechanical properties of silicon nitride (SiN), several laboratories have developed techniques for patterning nanopores in SiN using reactive ion etching (RIE) through a template structure. These methods however, have failed to produce pores small enough for ultrafiltration (<100 nm) in SiN and involve templates that are prone to microporous defects. Here we present a facile, wafer-scale method to produce nanoporous silicon nitride (NPN) membranes using porous nanocrystalline silicon (pnc-Si) as a self-assembling, defect free, RIE masking layer. By modifying the mask layer morphology and the RIE etch conditions, the pore sizes of NPN can be adjusted between 40 nm and 80 nm with porosities reaching 40%. The resulting NPN membranes exhibit higher burst pressures than pnc-Si membranes while having 5× greater permeability. NPN membranes also demonstrate the capacity for high resolution separations (<10 nm) seen previously with pnc-Si membranes. We further demonstrate that human endothelial cells can be grown on NPN membranes, verifying the biocompatibility of NPN and demonstrating the potential of this material for cell culture applications.
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http://dx.doi.org/10.1039/c4nr03070b | DOI Listing |
Nano Lett
January 2025
University Paris-Saclay, CNRS, Laboratoire de Physique des Solides, Orsay 91405, France.
Thermal transport in nanostructures plays a critical role in modern technologies. As devices shrink, techniques that can measure thermal properties at nanometer and nanosecond scales are increasingly needed to capture transient, out-of-equilibrium phenomena. We present a novel pump-probe photon-electron method within a scanning transmission electron microscope (STEM) to map temperature dynamics with unprecedented spatial and temporal resolutions.
View Article and Find Full Text PDFWe present both experimental and simulation results for a fully etched, C-band GC fabricated in an 800 nm silicon nitride platform that significantly reduces backreflections. They are minimized by truncating the initial grates, which deflect reflected light at an oblique angle and excite higher-order modes in the tapered waveguide that is filtered out. Insertion losses resulting from this modification of the grating coupler are mitigated by an adaptive redesign of the grates that corrects incurred errors in the generated phase front.
View Article and Find Full Text PDFSci Rep
January 2025
Department of Physics, The American University in Cairo, New Cairo, 11835, Egypt.
Inverse design with topology optimization considers a promising methodology for discovering new optimized photonic structure that enables to break the limitations of the forward or the traditional design especially for the meta-structure. This work presents a high efficiency mid infra-red imaging photonics element along mid infra-red wavelengths band starts from 2 to 5 µm based on silicon nitride optimized material structures. The first two designs are broadband focusing and reflective meta-lens under very high numerical aperture condition (NA = 0.
View Article and Find Full Text PDFExtracorporeal Membrane Oxygenation (ECMO) serves as a crucial intervention for patients with severe pulmonary dysfunction by facilitating oxygenation and carbon dioxide removal. While traditional ECMO systems are effective, their large priming volumes and significant blood-contacting surface areas can lead to complications, particularly in neonates and pediatric patients. Microfluidic ECMO systems offer a promising alternative by miniaturizing the ECMO technology, reducing blood volume requirements, and minimizing device surface area to improve safety and efficiency.
View Article and Find Full Text PDFMolecules
January 2025
School of Mechanical Engineering, Chongqing Three Gorges University, Chongqing 404100, China.
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