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All-Fiber Micro-Ring Resonator Based p-Si/n-ITO Heterojunction Electro-Optic Modulator.
Materials (Basel)
January 2025
State Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
With the rapid advancement of information technology, the data demands in transmission rates, processing speed, and storage capacity have been increasing significantly. However, silicon electro-optic modulators, characterized by their weak electro-optic effect, struggle to balance modulation efficiency and bandwidth. To overcome this limitation, we propose an electro-optic modulator based on an all-fiber micro-ring resonator and a p-Si/n-ITO heterojunction, achieving high modulation efficiency and large bandwidth.
View Article and Find Full Text PDFDesign and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter.
Micromachines (Basel)
January 2025
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to a special work mechanism and optimized performance. Simulation results show that the proposed PJLFET demonstrates an I/I ratio of more than seven orders of magnitude, with I reaching up to 2.
View Article and Find Full Text PDFPass-Transistor-Enabled Split Input Voltage Level Shifter for Ultra-Low-Power Applications.
Micromachines (Basel)
January 2025
Department of Mechanical Engineering, College of Engineering, King Khalid University, Abha 61421, Saudi Arabia.
In modern ICs, sub-threshold voltage management plays a significant role due to its perspective on energy efficiency and speed performance. Level shifters (LSs) play a critical role in signal exchange among multiple voltage domains by ensuring signal integrity and the reliable operation of ICs. In this article, a Pass-Transistor-Enabled Split Input Voltage Level Shifter (PVLS) is designed for area, delay, and power-efficient applications with a wide voltage conversion range.
View Article and Find Full Text PDFFabrication and Electrical Characterization of Low-Temperature Polysilicon Films for Sensor Applications.
Micromachines (Basel)
December 2024
International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal.
The development of low-temperature piezoresistive materials provides compatibility with standard silicon-based MEMS fabrication processes. Additionally, it enables the use of such material in flexible substrates, thereby expanding the potential for various device applications. This work demonstrates, for the first time, the fabrication of a 200 nm polycrystalline silicon thin film through a metal-induced crystallization process mediated by an AlSiCu alloy at temperatures as low as 450 °C on top of silicon and polyimide (PI) substrates.
View Article and Find Full Text PDFDesigns of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers.
Micromachines (Basel)
December 2024
School of Electrical and Electronic Engineering, Pusan National University, Busan 46241, Republic of Korea.
We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edges of the junction to quantitively control the effective charge (Q) in the termination structures.
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