We investigate the photocurrent generation by two-photon absorption effect in silicon microdisk resonators integrated with p-n diodes. The photocurrent is quite dependent on the p-n junction position with respect to the whispering gallery mode. Avalanche gain increases significantly when the bias exceeds -19 V, leading to considerable enhancement of photocurrent. At -22 V bias with on-chip optical power of 44.7 μW, the responsivity exceeds 1 A/W with an avalanche gain of 188 while the dark current is more than 50 times lower than the photocurrent.
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http://dx.doi.org/10.1364/OL.39.004525 | DOI Listing |
Sensors (Basel)
December 2024
CERN, Esplanade des Particules 1, 1217 Meyrin, Switzerland.
Device simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes. However, for simulations to be trusted, experimental validation is essential to confirm the accuracy of the conclusions drawn. In the framework of semiconductor detector characterisation, one powerful tool for such validation is the Two Photon Absorption-Transient Current Technique (TPA-TCT), which allows for highly precise, three-dimensional spatially-resolved characterisation of semiconductor detectors.
View Article and Find Full Text PDFSensors (Basel)
December 2024
SCAI Connect s.r.l., Via Vincenzo Lamaro 51, 00173 Rome, Italy.
The development and calibration of a measurement system designed for assessing the performance of the avalanche photodiodes (APDs) used in the Compton scattering polarimeter of the CUSP project is discussed in this work. The designed system is able to characterize the APD gain GAPD and energy resolution across a wide range of temperatures (from -20 °C to +60 °C) and bias voltages Vbias (from 260 V to 410 V). The primary goal was to experimentally determine the GAPD dependence on the and Vbias in order to establish a strategy for stabilizing GAPD by compensating for fluctuations, acting on Vbias.
View Article and Find Full Text PDFNat Nanotechnol
December 2024
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.
Colloidal quantum dots (CQDs) are promising for infrared photodetectors with high detectivity and low-cost production. Although CQDs enable photoinduced charge multiplication, thermal noise in low-bandgap materials limits their performance in IR detectors. Here we present a pioneering architecture of a CQD-based infrared photodetector that uses kinetically pumped avalanche multiplication.
View Article and Find Full Text PDFThis article proposes a separate absorption and multiplication (SAM) GaN-based avalanche photodiode (APD) that achieves both high gain and low operating voltage by applying Sc-based ferroelectric material ScGaN in APDs. The avalanche gain of the proposed SAM APD with a low Sc composition p-ScGaN insertion layer reaches 7.2 × 10, which is 60% higher than that of a conventional p-i-p-i-n GaN-based APD.
View Article and Find Full Text PDFSensors (Basel)
November 2024
Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.
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