Despite its simple chemical constitution and unparalleled technological importance, the phase-change material germanium telluride (GeTe) still poses fundamental questions. In particular, the bonding mechanisms in amorphous GeTe have remained elusive to date, owing to the lack of suitable bond-analysis tools. Herein, we introduce a bonding indicator for amorphous structures, dubbed "bond-weighted distribution function" (BWDF), and we apply this method to amorphous GeTe. The results underline a peculiar role of homopolar Ge-Ge bonds, which locally stabilize tetrahedral fragments but not the global network. This atom-resolved (i.e., chemical) perspective has implications for the stability of amorphous "zero bits" and thus for the technologically relevant resistance-drift phenomenon.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1002/anie.201404223 | DOI Listing |
Sci Rep
January 2025
Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, Pardubice, 532 10, Czech Republic.
Radio frequency magnetron co-sputtering method employing GeTe and Sc targets was exploited for the deposition of Sc doped GeTe thin films. Different characterization techniques (scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction, atomic force microscopy, sheet resistance temperature-dependent measurements, variable angle spectroscopic ellipsometry, and laser ablation time-of-flight mass spectrometry) were used to evaluate the properties of as-deposited (amorphous) and annealed (crystalline) Ge-Te-Sc thin films. Prepared amorphous thin films have GeTe, GeTeSc, GeTeSc, GeTeSc and GeTeSc chemical composition.
View Article and Find Full Text PDFJ Phys Condens Matter
December 2024
Herzen State Pedagogical University of Russia, St. Petersburg, Russia.
Despite a large amount of theoretical and experimental work performed so far, the search of phase change materials (PCMs) is done with use of numerical modeling. However, it is not fully clear how and why the phase change translates into the optical contrast. In this work, we argue that a key prerequisite for a material to have a pronounced difference in optical properties between crystalline and glassy phases of PCM is the similar contrast between the observed crystalline and (may be experimentally inaccessible) parent crystalline polymorph of the glassy phase.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea.
Chemistry
November 2024
Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210, Pardubice, Czech Republic.
Chem Mater
July 2024
Chemistry and Materials Design, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092 Zürich, Switzerland.
Phase-change memory (PCM) technology has recently attracted a vivid interest for neuromorphic applications, in-memory computing, and photonic integration due to the tunable refractive index and electrical conductivity between the amorphous and crystalline material states. Despite this, it is increasingly challenging to scale down the device dimensions of conventionally sputtered PCM memory arrays, restricting the implementation of PCM technology in mass applications such as consumer electronics. Here, we report the synthesis and structural study of sub-10 nm Cu-Ge-Te (CGT) nanoparticles as suitable candidates for low-cost and ultrasmall PCM devices.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!