KFe2As2, an iron-based superconductor, is expected to exhibit large spin Hall conductivity, and fabrication of high-quality thin films is requisite for evaluation of this effect and application to spintronics devices. Thin-film growth of KFe2As2 is difficult because of two intrinsic properties; its extremely hygroscopic nature and the high vapor pressure of potassium. We solved these issues by combining room-temperature pulsed laser deposition using K-rich KFe2As2 targets with thermal crystallization in KFe2As2 powder after encapsulation in an evacuated silica-glass tube with all of the processes conducted in a vacuum chamber and a dry Ar atmosphere in a glovebox. The optimized KFe2As2 films on (La,Sr)(Al,Ta)O3 single-crystal substrates were obtained by crystallization at 700 °C, and they were strongly c-axis oriented. The electrical measurements were performed with thin films protected by grease passivation to block reaction with the atmosphere. The KFe2As2 films exhibited a superconductivity transition at 3.7 K.
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