The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materials. For device applications, however, controlled large-area synthesis of highly crystalline monolayers with a low density of electronically active defects is imperative. Here, we demonstrate the electrical imaging of dendritic ad-layers and grain boundaries in monolayer molybdenum disulfide (MoS2) grown by a vapor transport technique using microwave impedance microscopy. The micrometer-sized precipitates in our films, which appear as a second layer of MoS2 in conventional height and optical measurements, show ∼ 2 orders of magnitude higher conductivity than that of the single layer. The zigzag grain boundaries, on the other hand, are shown to be more resistive than the crystalline grains, consistent with previous studies. Our ability to map the local electrical properties in a rapid and nondestructive manner is highly desirable for optimizing the growth process of large-scale MoS2 atomic layers.
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http://dx.doi.org/10.1021/nl501782e | DOI Listing |
ACS Nano
January 2025
Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.
Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS), have emerged as a generation of nonprecious catalysts for the hydrogen evolution reaction (HER), largely due to their theoretical hydrogen adsorption energy close to that of platinum. However, efforts to activate the basal planes of TMDs have primarily centered around strategies such as introducing numerous atomic vacancies, creating vacancy-heteroatom complexes, or applying significant strain, especially for acidic media. These approaches, while potentially effective, present substantial challenges in practical large-scale deployment.
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January 2025
Instituto de Física de São Carlos, Universidade de São Paulo, São Carlos 13566-590, Brazil.
Monolayers of transition-metal dichalcogenides, such as MoS, have attracted significant attention for their exceptional electronic and optical properties, positioning them as ideal candidates for advanced optoelectronic applications. Despite their strong excitonic effects, the atomic-scale thickness of these materials limits their light absorption efficiency, necessitating innovative strategies to enhance light-matter interactions. Plasmonic nanostructures offer a promising solution to overcome those challenges by amplifying the electromagnetic field and also introducing other mechanisms, such as hot electron injection.
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January 2025
BK21 Graduate Program in Intelligent Semiconductor Technology, Seoul 03722, Republic of Korea.
MoS, one of the most researched two-dimensional semiconductor materials, has great potential as the channel material in dynamic random-access memory (DRAM) due to the low leakage current inherited from the atomically thin thickness, high band gap, and heavy effective mass. In this work, we fabricate one-transistor-one-capacitor (1T1C) DRAM using chemical vapor deposition (CVD)-grown monolayer (ML) MoS in large area and confirm the ultralow leakage current of approximately 10 A/μm, significantly lower than the previous report (10 A/μm) in two-transistor-zero-capacitor (2T0C) DRAM based on a few-layer MoS flake. Through rigorous analysis of leakage current considering thermionic emission, tunneling at the source/drain, Shockley-Read-Hall recombination, and trap-assisted tunneling (TAT) current, the TAT current is identified as the primary source of leakage current.
View Article and Find Full Text PDFChem Sci
December 2024
Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University Beijing 100871 China
The search for efficient, earth-abundant electrocatalysts for the hydrogen evolution reaction (HER) has identified unsaturated molybdenum disulfide (MoS) as a leading candidate. This review synthesises recent advancements in the engineering of MoS to enhance its electrocatalytic properties. It focuses on strategies for designing an unsaturated electronic structure on metal catalytic centers and their role in boosting the efficiency of the hydrogen evolution reaction (HER).
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Atomic layer deposition (ALD) of high-k dielectric films on MoS channels can lead to inadvertent remote electron doping of channels owing to nonequilibrium ALD conditions, such as the low temperatures and short purge times required for pinhole-free coating, as well as the weak physical adsorption of ALD precursors on MoS. In this study, we propose the application of a simple and effective HO vapor post-treatment (HO PT) at 100 °C immediately after complete integration of bottom- and top-gate monolayer MoS field-effect transistors (FETs), to address the inadvertent channel doping effect. When HO PT was applied to bottom-gate monolayer MoS FETs with an ALD-AlO passivation layer, the mitigation of channel doping was confirmed through electrical and optical measurements.
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