Highly stable and highly soluble push-pull heptamethine hemicyanines based on the tricyanofuran electron-accepting group can be prepared on a 15 g scale. The compounds display giant second-order nonlinear figure of merit, μβ of up to 31,000×10(-48) esu, and lead to a poled material with a second-order nonlinear response, r33 of 90 pm V(-1) at 1.06 μm.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1002/chem.201402692 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Giant Photogalvanic Effect-Induced Terahertz Wave Emission in Wafer-Scale Type-II Dirac Semimetal PtTe.
ACS Appl Mater Interfaces
January 2025
State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China.
Terahertz (THz) emission arising from the second-order nonlinear photocurrent effects in two-dimensional quantum materials has attracted significant attention due to its high efficiency and ease of polarization manipulation. However, in centrosymmetric quantum materials, the terahertz emission is typically suppressed, caused by the directional symmetry of the photocurrent generated under femtosecond laser excitation. In this work, we report that wafer-scale type-II Dirac semimetal PtTe with lattice centrosymmetry exhibits remarkably high THz emission efficiency (2 orders of magnitude greater than that of a ZnTe nonlinear crystal with equivalent thickness) and pronounced polarization sensitivity at room temperature.
View Article and Find Full Text PDFTransitions in growing networks using a structural complexity approach.
Phys Rev E
November 2024
Department of General Physics, The National Technical University of Ukraine "Igor Sikorsky Kyiv Polytechnic Institute," Kyiv, Ukraine and Institute for Information Recording, NAS of Ukraine, Mykoly Shpaka Street 2, 03113 Kiev, Ukraine.
Structure changes or transitions are common in growing networks (complex networks, graphs, etc.) and must be precisely determined. The introduced quantitative measure of the structural complexity of the network based on a procedure similar to the renormalization process allows one to reveal such changes.
View Article and Find Full Text PDFAsymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study.
Nanophotonics
April 2024
Dipartimento di Fisica "E. Fermi", Università di Pisa, Largo Pontecorvo 3, 56127, Pisa, Italy.
We present a theoretical investigation of guided second harmonic generation at THz frequencies in SiGe waveguides embedding n-type Ge/SiGe asymmetric coupled quantum wells to engineer a giant second order nonlinear susceptibility. A characteristic of the chosen material system is the existence of large off-diagonal elements in the tensor, coupling optical modes with different polarization. To account for this effect, we generalize the coupled-mode theory, proposing a theoretical model suitable for concurrently resolving every second harmonic generation interaction among guide-sustained modes, regardless of which tensor elements it originates from.
View Article and Find Full Text PDFPhase Engineering of Giant Second Harmonic Generation in BiOSe.
Adv Mater
December 2024
Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science and Research Center for Industries of the Future, Westlake University, Hangzhou, 310030, P. R. China.
2D materials with remarkable second-harmonic generation (SHG) hold promise for future on-chip nonlinear optics. Relevant materials with both giant SHG response and environmental stability are long-sought targets. Here, the enormous SHG from the phase engineering of a high-performance semiconductor, BiOSe (BOS), under uniaxial strain, is demonstrated.
View Article and Find Full Text PDFStrain-Mediated Second Harmonic Generation Enhancement of Bimetallic Metal-Organic Frameworks.
J Phys Chem Lett
December 2024
Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
Triggered by the demand of developing practical metal-organic framework (MOF) based nonlinear optical (NLO) devices, there is a surge of research interest in the regulation of NLO properties of MOFs. Strain engineering provides a new opportunity to regulate the optoelectronic properties of materials and device performance at the interface. Here we introduce the induction of the strain field in structures by constructing bimetallic Zn/Cu-MOFs.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!