Enrofloxacin is a fluoroquinolone derivative used for treating urinary tract, respiratory and skin infections in animals. However, low solubility and low bioavailability prevented it from using on humans. Polyvinylpyrrolidone (PVP) is an inert, non toxic polymer with excellent hydrophilic properties, besides it can enhance bioavailability by forming drug polymer conjugates. With the aim of increasing solubility and bioavailability, enrofloxacin thin films were prepared using PVP as a polymer matrix. The obtained oral thin films exhibited excellent uniformity and mechanical properties. Swelling properties of the oral thin films revealed that the water uptake was enhanced by 21%. The surface pH has been found to be 6.8±0.1 indicating that these films will not cause any irritation to oral mucosa. FTIR data of the oral thin films indicated physical interaction between drug and polymer. SEM analysis revealed uniform distribution of drug in polymer matrix. In vitro drug release profiles showed enhanced release profiles (which are also pH dependant) for thin films compared to pure drug. Antibacterial activity was found to be dose dependent and maximum susceptibility was found on Klebsiella pneumonia making this preparation more suitable for respiratory infections.
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http://dx.doi.org/10.1016/j.ijpharm.2014.05.033 | DOI Listing |
Nano Converg
January 2025
Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup-si, Jeolabuk-do, 56212, Republic of Korea.
Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. In this study, significantly enhanced radiation hardness of AlO-passivated ZnO TFTs against high-energy protons with energies of up to 100 MeV is obtained owing to the passivation layer blocking interactions with external reactants, thereby maintaining the chemical stability of the thin-film semiconductor.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States.
Dark-field and confocal approaches to circular dichroism (CD) spectroscopy of uniaxial thin films examine the relationship between symmetry and incoherence in the nonreciprocal CD response, or the component that is antisymmetric about the light propagation direction. Modifying a conventional CD spectrometer for low-angle scattering detection isolates incoherent contributions to nonreciprocal CD of drop-cast thin films, boasting 5-to-10-fold enhancements in CD dissymmetry parameters. Conversely, confocal detection suppresses the nonreciprocal CD response.
View Article and Find Full Text PDFFront Chem
January 2025
Nanophotonics Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli, India.
An interesting approach of including an upconverter in the MoS counter electrode can yield broadband light harvesting Pt-free DSSC assembly. Here different upconverter (UC) nanoparticles (Yb, Er incorporated NaYF, YF, CeO & YO) were synthesized and loaded in MoS thin film by hydrothermal method. The inclusion of UCs in MoS films exposed without any secondary formation of upconverters and the uniform deposition of the films are confirmed through XRD and FESEM analysis respectively.
View Article and Find Full Text PDFACS Sens
January 2025
Department of Physics, National Chung Hsing University, Taichung 402, Taiwan.
Next-generation real-time gas sensors are crucial for detecting multiple gases simultaneously with high sensitivity and selectivity. In this study, ternary metal sulfide (PbSnS)-incorporated metal oxide (SnO) heterostructures were synthesized via a one-step hydrothermal method. Characterizations such as X-ray diffraction, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy confirmed the successful formation of PbSnS/SnO heterostructures.
View Article and Find Full Text PDFACS Nano
January 2025
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.
Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high-temperature stability, high breakdown voltage, wide bandgap, and high mechanical strength are accompanied by a chemical inertness, which makes complex micromachining difficult. Photoelectrochemical (PEC) etching is a simple, rapid means of wet processing SiC, including the use of dopant-selective etch stops that take advantage of the mature SiC homoepitaxy.
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