Atomic layer deposition of metal oxide patterns on nonwoven fiber mats using localized physical compression.

Patterning is an essential part of many industrial processes from printing to semiconductor manufacturing. In this work, we demonstrate a new method to pattern and selectively coat nonwoven textiles by atomic layer deposition (ALD) using compressive mask patterning. A physical mask combined with mechanical compression allows lateral definition and fidelity of the ALD coating to be controlled. We produce features of several sizes on different nonwoven fiber materials and demonstrate the ability to limit diffusion effects to within <200 μm of the pattern edge. Lateral and vertical penetration of reactive growth species into nonwoven mats is investigated by plan-view and cross-sectional imaging. Vertical growth is also analyzed by imaging coating depth into fiber mat stacks. We develop a fully quantitative transport model that describes well the effect of fiber structure and mechanical compression on the extent of coating under the physical mask. This method could be implemented for high-volume patterning for applications including flexible electronics.