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Nanocrystalline ZnON; high mobility and low band gap semiconductor material for high performance switch transistor and image sensor application. | LitMetric

AI Article Synopsis

  • Interest in oxide semiconductors, like ZnO, is growing due to their ease of processing, decent mobility, and wide-bandgap, but they still need improvements for advanced electronic applications.
  • Introducing nitrogen into ZnO creates a composite called ZnON that significantly boosts channel mobility, enhances optical absorption for visible light, and improves microstructural uniformity, making it more suitable for transistors and photo-sensors.
  • ZnON shows impressive properties, exceeding 100 cm(2) V(-1) s(-1) in mobility and a band-gap of 1.3 eV, with its performance adjustable based on nitrogen concentration, which can optimize devices for display technologies.

Article Abstract

Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3-10 cm(2)/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm(2)/vs and wide-bandgap is not suitable for photo/image sensor applications. The incorporation of nitrogen into ZnO semiconductor can be tailored to increase channel mobility, enhance the optical absorption for whole visible light and form uniform micro-structure, satisfying the desirable attributes essential for high performance transistor and visible light photo-sensors on large area platform. Here, we present electronic, optical and microstructural properties of ZnON, a composite of Zn3N2 and ZnO. Well-optimized ZnON material presents high mobility exceeding 100 cm(2) V(-1) s(-1), the band-gap of 1.3 eV and nanocrystalline structure with multiphase. We found that mobility, microstructure, electronic structure, band-gap and trap properties of ZnON are varied with nitrogen concentration in ZnO. Accordingly, the performance of ZnON-based device can be adjustable to meet the requisite of both switch device and image-sensor potentials. These results demonstrate how device and material attributes of ZnON can be optimized for new device strategies in display technology and we expect the ZnON will be applicable to a wide range of imaging/display devices.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4018964PMC
http://dx.doi.org/10.1038/srep04948DOI Listing

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