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Biomed Phys Eng Express
January 2025
Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Qau, Islamabad, Islamabad, 44000, PAKISTAN.
The current study investigated the geometry, design and solid angle impacts on full energy peak efficiency (FEPE) of NaI(Tl) detectors for a line source. A line source is fabricated using 99mTc solution filled in a borosilicate glass tube of inner diameter 3 mm, tube wall thickness 2.5 mm and length 12.
View Article and Find Full Text PDFFoot Ankle Int
January 2025
Royal National Orthopaedic Hospital NHS Trust, Foot & Ankle Unit, Stanmore, United Kingdom.
Background: Ankle and hindfoot fusion in the presence of large bony defects represents a challenging problem. The purpose of this study was to evaluate outcomes of patients who underwent ankle-hindfoot fusions with impaction bone grafting (IBG) with morselized femoral head allograft to fill large bony void defects.
Methods: This was a 3-center, retrospective review of a consecutive series of 49 patients undergoing ankle or hindfoot fusions with femoral head IBG for filling large bony defects.
ACS Cent Sci
January 2025
NeXUS, The Ohio State University, 120 W 18th Ave, Columbus, Ohio 43210, United States.
NSF NeXUS is an open-access user facility that enables observation of electron motion with sub-femtosecond time resolution, angstrom spatial resolution, and element-specific spectral resolution.
View Article and Find Full Text PDFLife Sci Space Res (Amst)
February 2025
NASA Ames Research Center, Moffett Field, CA 94035, United States.
The BioSentinel CubeSat was deployed on the Artemis-I mission in November 2022 and has been continuously transmitting physical measurements of the space radiation environment since that time. Just before mission launch, we published computational model predictions of the galactic cosmic ray exposure expected inside BioSentinel for multiple locations and configurations. The predictions utilized models for the ambient galactic cosmic ray environment, radiation physics and transport, and BioSentinel geometry.
View Article and Find Full Text PDFMicromachines (Basel)
January 2025
School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China.
In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench structure and the enhanced sidewall channel are formed simultaneously, which is beneficial to enhance the conduction capability compared with the conventional trenched MOSFET. It demonstrates that a proper hole concentration and thickness of the p-GaN layer are key parameters to balance the threshold voltage, on-state resistance, and off-state breakdown voltage, resulting in the highest Baliga's figure of merit value.
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