ZnO-PEG-ZnO complex film was fabricated by forming ZnO thin film on the Polyethyleneglycol (PEG) thin film. ZnO thin films were formed by an electrostatic method and ZnO-PEG complex films were fabricated by adsorbing PEG on the ZnO thin films surface with hydrogen bond. The electrochemical characteristic of the ZnO-PEG-ZnO film was analyzed by EQCM techniques. The resonance frequency, resistance and current changes were measured simultaneously with scan rate 100 mV/s, sweep range -1.4-1.2 V in 5 mM ZnCl2 aqueous solution. The electrochemical characteristic of the ZnO-PEG-ZnO complex film was compared with that of the ZnO thin film, and the possible electrode applications of ZnO-PEG-ZnO complex films were examined.
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http://dx.doi.org/10.1166/jnn.2014.8414 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Laboratory of Atomic-scale and Micro & Nano Manufacturing, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
Different application domains impose diverse and often conflicting requirements on the optoelectronic performance of metal oxide semiconductor (MOS) thin-film transistors (TFTs). These varying demands present substantial challenges in the selection of TFT materials and the optimization of device performance. This study begins by examining three primary application areas for TFTs: display drivers, photodetectors, and optoelectronic synapses.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Tecnológico Nacional de México Campus Tuxtla, Carretera Panamericana Km 1080, Tuxtla Gutiérrez C.P. 29050, Mexico.
This study provides a comprehensive structural, chemical, and optical characterization of CZTS thin films deposited on flexible Kapton substrates via the Successive Ionic Layer Adsorption and Reaction (SILAR) method. The investigation explored the effects of varying deposition cycles (40, 60, 70, and 80) and annealing treatments on the films. An X-ray diffraction (XRD) analysis demonstrated enhanced crystallinity and phase purity, particularly in films deposited with 70 cycles.
View Article and Find Full Text PDFDalton Trans
January 2025
Faculty of Materials Science and Engineering, Phenikaa University, Hanoi 12116, Viet Nam.
Cupric oxide (CuO) is a promising p-type semiconducting oxide used in many critical fields, such as energy conversion and storage, and gas sensors, which is attributed to its unique optoelectrical properties and cost-effectiveness. This work successfully deposited amorphous, pinhole-free, ultrathin CuO films using atmospheric pressure spatial atomic layer deposition (SALD) with copper(II) acetylacetonate and ozone as precursors. The growth rate increased from 0.
View Article and Find Full Text PDFACS Appl Electron Mater
January 2025
Electrical Engineering Division, Engineering Department, University of Cambridge, Cambridge CB3 0FA, U.K.
Nanoscale semiconductors offer significant advantages over their bulk semiconductor equivalents for electronic devices as a result of the ability to geometrically tune electronic properties, the absence of internal grain boundaries, and the very low absolute number of defects that are present in such small volumes of material. However, these advantages can only be realized if reliable contacts can be made to the nanoscale semiconductor using a scalable, low-cost process. Although there are many low-cost "bottom-up" techniques for directly growing nanomaterials, the fabrication of contacts at the nanoscale usually requires expensive and slow techniques like e-beam lithography that are also hard to scale to a level of throughput that is required for commercialization.
View Article and Find Full Text PDFACS Omega
January 2025
Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon 24341, South Korea.
Zinc oxide (ZnO) thin-film transistors (TFTs) can be promising for applications in wide-band light absorption. However, they suffer from retarded photoresponse characteristics due to atomic defects and the resulting localized electronic states. To investigate the photoinduced localized states of the ZnO TFTs, here, we combine X-ray photoelectron spectroscopy, atomic force microscopy, and density functional theory (DFT) calculations.
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