AI Article Synopsis
- Hard X-ray photoelectron spectroscopy demonstrates that resistive switching in Ti/Pr₀.₄₈Ca₀.₅₂MnO₃ (PCMO) devices is primarily driven by a redox process on the titanium side.
- The resistance levels of the devices are influenced by the amount of fully oxidized titanium ions present, highlighting a key role of titanium in the switching mechanism.
- This redox reaction at the interface leads to changes in an insulating tunnel barrier, affecting the device's electrical properties.
Article Abstract
By using hard X-ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr₀.₄₈ Ca₀.₅₂ MnO₃ (PCMO) devices is based on a redox-process that mainly occurs on the Ti-side. The different resistance states are determined by the amount of fully oxidized Ti-ions in the stack, implying a reversible redox-reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier.
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| http://dx.doi.org/10.1002/adma.201304054 | DOI Listing |
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