Dielectric membranes with exceptional mechanical and optical properties present one of the most promising platforms in quantum opto-mechanics. The performance of stressed silicon nitride nanomembranes as mechanical resonators notoriously depends on how their frame is clamped to the sample mount, which in practice usually necessitates delicate, and difficult-to-reproduce mounting solutions. Here, we demonstrate that a phononic bandgap shield integrated in the membrane's silicon frame eliminates this dependence, by suppressing dissipation through phonon tunneling. We dry-etch the membrane's frame so that it assumes the form of a cm-sized bridge featuring a 1-dimensional periodic pattern, whose phononic density of states is tailored to exhibit one, or several, full band gaps around the membrane's high-Q modes in the MHz-range. We quantify the effectiveness of this phononic bandgap shield by optical interferometry measuring both the suppressed transmission of vibrations, as well as the influence of frame clamping conditions on the membrane modes. We find suppressions up to 40 dB and, for three different realized phononic structures, consistently observe significant suppression of the dependence of the membrane's modes on sample clamping-if the mode's frequency lies in the bandgap. As a result, we achieve membrane mode quality factors of 5 × 10(6) with samples that are tightly bolted to the 8 K-cold finger of a cryostat. Q × f -products of 6 × 10(12) Hz at 300 K and 14 × 10(12) Hz at 8 K are observed, satisfying one of the main requirements for optical cooling of mechanical vibrations to their quantum ground-state.
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http://dx.doi.org/10.1364/OE.22.006810 | DOI Listing |
Nanoscale
January 2025
School of Science, Jiangsu University of Science and Technology, Zhenjiang 212001, China.
Herein, we propose a new GaN/MoSiP van der Waals (vdWs) heterostructure constructed by vertically stacking GaN and MoSiP monolayers. Its electronic, optical, and photocatalytic properties are explored DFT++BSE calculations. The calculated binding energy and phonon spectrum demonstrated the material's high stabilities.
View Article and Find Full Text PDFJ Phys Condens Matter
December 2024
Department of Physics, Indian Institute of Technology Delhi, IIT Delhi, Hauz Khas, New Delhi, Delhi, 110016, INDIA.
We have grown (111)- and (001)-oriented NiO thin films on (0001)-Sapphire and (001)-MgO substrates using pulsed laser deposition (PLD), respectively. DC magnetic susceptibility measurements underline that the Néel temperatures of the samples are beyond room-temperature. This is further confirmed by the presence of two-magnon Raman scattering modes in these films in ambient conditions.
View Article and Find Full Text PDFJ Phys Chem Lett
December 2024
College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, People's Republic of China.
Hybrid lead halide perovskites are promising materials for photovoltaic applications due to their exceptional optoelectronic properties. Here, we investigate the impact of Schottky defects─specifically PbI(V) and CHNHI (V) vacancies─on nonradiative recombination in CHNHPbI using time-dependent density functional theory and nonadiabatic (NA) molecular dynamics. Our results reveal that Schottky defects do not alter the fundamental bandgap or introduce trap states but instead distort the surrounding lattice, localizing the hole distribution.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
State Key Laboratory of Intelligent Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
MgZnO possesses a tunable bandgap and can be prepared at relatively low temperatures, making it suitable for developing optoelectronic devices. MgZnO (~0.1) films were grown on sapphire by metal-organic vapor phase epitaxy under different substrate-growth temperatures of 350-650 °C and studied by multiple characterization technologies like X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Raman scattering, extended X-ray absorption fine structure (EXAFS), and first-principle calculations.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China.
Entropy design, facilitated by disorder, emerges as a crucial strategy for the performance enhancement of thermoelectric materials. The characteristic average multielement composition of Janus MoSSe offers an opportunity to introduce intrinsic elemental disorder by altering the positions of different atoms, thereby boosting entropy. Here, we explored the thermoelectric performance of the initial MoSSe and various constructed disordered structures through first-principles calculations.
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