AI Article Synopsis
- The study explores using a p-type inorganic semiconductor (CuSCN) to create a nanorod scaffold in polymer-fullerene bulk heterojunction solar cells, as opposed to the usual n-type ZnO scaffold.
- The goal is to enhance charge-carrier collection and mobility in thicker solar cell samples.
- Results indicate that as the nanorod length increases, the overall performance of the solar cells decreases, with similar trends observed in cells using both CuSCN and ZnO scaffolds.
Article Abstract
The use of a p-type inorganic semiconductor to form a nanorod scaffold within a polymer-fullerene bulk heterojunction solar cell is reported. The performance of this cell is compared to those made of the commonly used n-type scaffold of ZnO, which has been reported many times in the literature. The scaffold is designed to improve charge-carrier collection by increased mobility in thicker samples. Observations show that generally the device performance shows a negative correlation to nanorod length. By using CuSCN as a p-type inorganic scaffold, a very similar trend is observed.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4501325 | PMC |
| http://dx.doi.org/10.1002/cphc.201301104 | DOI Listing |
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