Gram quantities of both unfunctionalized and 1,4-benzenedithiol (BDT) functionalized zinc phosphide (Zn3P2) nanowire powders, synthesized using direct reaction of zinc and phosphorus, were hot-pressed into highly dense pellets (≥98% of the theoretical density) for the determination of their thermoelectric performance. It was deduced that mechanical flexibility of the nanowires is essential for consolidating them in randomly oriented fashion into dense pellets, without making any major changes to their morphologies. Electrical and thermal transport measurements indicated that the enhanced thermoelectric performance expected of individual Zn3P2 nanowires is still retained within large-scale nanowire assemblies. A maximum reduction of 28% in the thermal conductivity of Zn3P2 resulted from nanostructuring. Use of nanowire morphology also led to enhanced electrical conductivity in Zn3P2. Interface engineering of the nanowires in the pellets, accomplished by hot-pressing BDT functionalized nanowires, resulted in an increase on both the Seebeck coefficient and the electrical conductivity of the nanowire pellets. It is believed that filtering of low energy carriers resulting from the variation of the chemical compositions at the nanowire interfaces is responsible for this phenomenon. Overall, this study indicated that mechanical properties of the nanowires along with the chemical compositions of their surfaces play a hitherto unknown, but vital, role in realizing highly efficient bulk thermoelectric modules based on nanowires.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1088/0957-4484/25/14/145401 | DOI Listing |
ACS Appl Energy Mater
May 2022
Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitigation is of great interest in photovoltaics as it opens up more material combinations for use in devices. Herein, an overview of the vapor-liquid-solid and selective area epitaxy growth approaches applied to zinc phosphide (ZnP), an earth-abundant absorber material, is presented.
View Article and Find Full Text PDFNanoscale
November 2021
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, 08193, Spain.
Zinc phosphide (ZnP) is an ideal absorber candidate for solar cells thanks to its direct bandgap, earth-abundance, and optoelectronic characteristics, albeit it has been insufficiently investigated due to limitations in the fabrication of high-quality material. It is possible to overcome these factors by obtaining the material as nanostructures, the selective area epitaxy approach, enabling additional strain relaxation mechanisms and minimizing the interface area. We demonstrate that ZnP nanowires grow mostly defect-free when growth is oriented along the [100] and [110] of the crystal, which is obtained in nanoscale openings along the [110] and [010] on InP(100).
View Article and Find Full Text PDFNanotechnology
February 2021
Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
Earth-abundant and low-cost semiconductors, such as zinc phosphide (ZnP), are promising candidates for the next generation photovoltaic applications. However, synthesis on commercially available substrates, which favors the formation of defects, and controllable doping are challenging drawbacks that restrain device performance. Better assessment of relevant properties such as structure, crystal quality and defects will allow faster advancement of ZnP, and in this sense, Raman spectroscopy can play an invaluable role.
View Article and Find Full Text PDFNanoscale
November 2020
Laboratory of Semiconductor Materials, Institute of Materials École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar cells due to the combination of suitable optoelectronic properties and an abundance of the constituting elements in the Earth's crust. The generation of periodic superstructures along the nanowire axis could provide an additional mechanism to tune their functional properties. Here we present the vapour-liquid-solid growth of zinc phosphide superlattices driven by periodic heterotwins.
View Article and Find Full Text PDFNanoscale
April 2016
State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, Hubei, P. R. China.
We, for the first time, successfully grafted well-aligned binary lithium-reactive zinc phosphide (Zn3P2) nanowire arrays on carbon fabric cloth by a facile CVD method. When applied as a novel self-supported binder-free anode for lithium ion batteries (LIBs), the hierarchical three-dimensional (3D) integrated anode shows excellent electrochemical performances: a highly reversible initial lithium storage capacity of ca. 1200 mA h g(-1) with a coulombic efficiency of up to 88%, a long lifespan of over 200 cycles without obvious decay, and a high rate capability of ca.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!