Due to the two-dimensional confinement of electrons, single- and few-layer MoSe₂ nanostructures exhibit unusual optical and electrical properties and have found wide applications in catalytic hydrogen evolution reaction, field effect transistor, electrochemical intercalation, and so on. Here we present a new application in dye-sensitized solar cell as catalyst for the reduction of I₃(-) to I(-) at the counter electrode. The few-layer MoSe₂ is fabricated by surface selenization of Mo-coated soda-lime glass. Our results show that the few-layer MoSe₂ displays high catalytic efficiency for the regeneration of I(-) species, which in turn yields a photovoltaic energy conversion efficiency of 9.00%, while the identical photoanode coupling with "champion" electrode based on Pt nanoparticles on FTO glass generates efficiency only 8.68%. Thus, a Pt- and FTO-free counter electrode outperforming the best conventional combination is obtained. In this electrode, Mo film is found to significantly decrease the sheet resistance of the counter electrode, contributing to the excellent device performance. Since all of the elements in the electrode are of high abundance ratios, this type of electrode is promising for the fabrication of large area devices at low materials cost.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC3924216PMC
http://dx.doi.org/10.1038/srep04063DOI Listing

Publication Analysis

Top Keywords

few-layer mose₂
16
counter electrode
12
high catalytic
8
electrode
7
few-layer
4
mose₂ possessing
4
possessing high
4
catalytic activity
4
activity iodide/tri-iodide
4
iodide/tri-iodide redox
4

Similar Publications

Nanoelectromechanical systems (NEMS) based on atomically-thin tungsten diselenide (WSe), benefiting from the excellent material properties and the mechanical degree of freedom, offer an ideal platform for studying and exploiting dynamic strain engineering and cross-scale vibration coupling in two-dimensional (2D) crystals. However, such opportunity has remained largely unexplored for WSe NEMS, impeding exploration of exquisite physical processes and realization of novel device functions. Here, we demonstrate dynamic coupling between atomic lattice vibration and nanomechanical resonances in few-layer WSe NEMS.

View Article and Find Full Text PDF

Tuning electronic and optical properties of 2D polymeric C by stacking two layers.

Nanoscale

January 2025

Theory of Condensed Matter Group, Cavendish Laboratory, University of Cambridge, J.J.Thomson Avenue, Cambridge CB3 0HE, UK.

Benefiting from improved stability due to interlayer van der Waals interactions, few-layer fullerene networks are experimentally more accessible compared to monolayer polymeric C. However, there is a lack of systematic theoretical studies on the material properties of few-layer C networks. Here, we compare the structural, electronic and optical properties of bilayer and monolayer fullerene networks.

View Article and Find Full Text PDF

Hydrogen-bonded organic frameworks (HOFs) are under fast development in broad applications but have not been well explored for chemiresistive gas sensing yet primarily due to insufficient active sites. Herein, a new porphyrin-based HOF-199 is constructed by OH···O hydrogen bonds featuring layered networks and rich free oxygen (O) atoms, which is further exfoliated into few-layer nonosheets with more dangling O sites through an ultrasound-assisted liquid exfoliation method (namely L-HOF-199). Benefiting from rich electron-donor sites, L-HOF-199 demonstrates exceptional NO sensing properties under ambient conditions, achieving a remarkable 3.

View Article and Find Full Text PDF

High-performance van der Waals stacked transistors based on ultrathin GaPS dielectrics.

Nanoscale

January 2025

School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China.

Article Synopsis
  • Exploring high-κ gate dielectrics is vital for enhancing the performance of field-effect transistors (FETs).
  • The study introduces few-layer gallium thiophosphate (GaPS) as a new semiconductor material with a dielectric constant of about 5.3, which can be easily obtained through mechanical exfoliation.
  • FETs using GaPS as the top-gate dielectric and MoS as the channel material demonstrated impressive performance metrics, indicating that GaPS could be a promising option for advancing two-dimensional electronic devices.
View Article and Find Full Text PDF

Two-dimensional (2D) PdSe atomic crystals hold great potential for optoelectronic applications due to their bipolar electrical characteristics, tunable bandgap, high electron mobility, and exceptional air stability. Nevertheless, the scalable synthesis of large-area, high-quality 2D PdSe crystals using chemical vapor deposition (CVD) remains a significant challenge. Here, we present a self-limiting liquid-phase edge-epitaxy (SLE) low-temperature growth method to achieve high-quality, centimeter-sized PdSe films with single-crystal domain areas exceeding 30 μm.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!