AI Article Synopsis
- The study presents a dual-layer transparent Indium Tin Oxide (ITO) top electrode for improving the optical output power of GaN-based LEDs.
- The structure features a layer with randomly distributed sphere-like nano-patterns created by a maskless wet etching process and a pre-annealed bottom layer for better current spreading.
- Results show a 2.18 times increase in optical output at 100 mA, with no loss in electrical performance compared to standard LEDs.
Article Abstract
We propose a dual-layer transparent Indium Tin Oxide (ITO) top electrode scheme and demonstrate the enhancement of the optical output power of GaN-based light emitting diodes (LEDs). The proposed dual-layer structure is composed of a layer with randomly distributed sphere-like nano-patterns obtained solely by a maskless wet etching process and a pre-annealed bottom layer to maintain current spreading of the electrode. It was observed that the surface morphologies and optoelectronic properties are dependent on etching duration. This electrode significantly improves the optical output power of GaN-based LEDs with an enhancement factor of 2.18 at 100 mA without degradation in electrical property when compared to a reference LED.
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| http://dx.doi.org/10.1364/OE.21.00A970 | DOI Listing |
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