AI Article Synopsis
- - The concentration of oxygen interstitials in Sc2O3 films, created through ion beam sputtering, can be regulated by adjusting the film deposition conditions.
- - A significant presence of oxygen interstitials was found in the films at approximately 10^18 cm(-3), which correlates with increased stress and higher optical absorption.
- - Optimal Sc2O3 films, showing minimal stress and reduced optical absorption at 1 μm wavelength, were achieved by using low oxygen partial pressure and low beam voltage.
Article Abstract
We show that the concentration of oxygen interstitials trapped in Sc2O3 films by ion beam sputtering from metal targets can be controlled by modifying deposition conditions. We have identified point defects in the form of oxygen interstitials that are present in Sc2O3 films, in significantly high concentrations, i.e., ∼10(18) cm(-3). These results show a correlation between the increase of oxygen interstitials and the increase in stress and optical absorption in the films. Sc2O3 films with the lowest stress and optical absorption loss at 1 μm wavelength were obtained when using a low oxygen partial pressure and low beam voltage.
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| http://dx.doi.org/10.1364/AO.53.00A276 | DOI Listing |
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