AI Article Synopsis
- Researchers developed a method to create large, uniform molybdenum disulfide films on insulating surfaces using gas phase sulfuric precursor and molybdenum metal.
- By adjusting the thickness of the metal layer, they controlled the number of layers in the synthesized films, ranging from 2 to 12 layers.
- The resulting thin film transistors demonstrated strong performance with an impressive on/off current ratio of 10^5 and a mean mobility of 0.07 cm²/V·s, indicating reliable operation.
Article Abstract
We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 10(5), a mobility of 0.12 cm(2) V(-1) s(-1) (mean mobility value of 0.07 cm(2) V(-1) s(-1)), and reliable operation.
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| http://dx.doi.org/10.1039/c3nr05993f | DOI Listing |
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