We report the large-area alignment of multi-segmented nanowires in nanoscale trenches facilitated by capillary forces. Electrochemically synthesized nanowires between 120 and 250 nm in length are aligned and then etched selectively to remove one segment, resulting in arrays of nanowires with precisely controlled gaps varying between 2 and 30 nm. Crucial to this alignment process is the dispersibility of the nanowires in solution which is achieved by chemically modifying them with hexadecyltrimethylammonium bromide. We found that, even without the formation of an ordered crystalline phase at the droplet edges, the nanowires can be aligned in high yield. To illustrate the versatility of this approach as a nanofabrication technique, the aligned nanowires were used for the fabrication of arrays of gapped graphene nanoribbons and SERS substrates.
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Discov Nano
December 2024
IMDEA Materials Institute, C/Eric Kandel 2, 28906, Getafe, Madrid, Spain.
New materials for electrical conductors, energy storage, thermal management, and structural elements are required for increased electrification and non-fossil fuel use in transport. Appropriately assembled as macrostructures, nanomaterials can fill these gaps. Here, we critically review the materials science challenges to bridge the scale between the nanomaterials and the large-area components required for applications.
View Article and Find Full Text PDFSmall
December 2024
Department of Intelligence Semiconductor and Engineering, Ajou University, Suwon, Republic of Korea.
Rapid expansion of digital information density has led to a growing demand for multi-valued logic (MVL) systems, which aim to minimize energy and time consumption for computations. Heterojunction transistors represent a class of device architectures for MVL circuits; however, partially layered structures can be realized only for vacuum-deposited organic and transferred 2D materials due to the constraints of patterning processes. In this study, a novel CuO/IGZO heterojunction-based ternary inverter is presented via a sol-gel technique and direct patterning process using a self-assembled monolayer (SAM).
View Article and Find Full Text PDFNanotechnology
December 2024
Department of Physics (DTU Fysik), Technical University of Denmark, Fysikvej, Kgs. Lyngby, 2800, DENMARK.
ACS Nano
December 2024
Department of Chemistry and Center of Super-Diamond & Advanced Films, City University of Hong Kong, Kowloon, Hong Kong 999077, China.
The large-scale preparation of two-dimensional (2D) materials is pivotal in unlocking their extensive potential for next-generation semiconductor device applications. Wafer-scale single crystals of a high-symmetry 2D material (e.g.
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November 2024
Guangxi Key Laboratory of Optical and Electronic Material and Devices, School of Materials Science and Engineering, Guilin University of Technology, 12 Jiangan Road, Guilin, Guangxi, 541004, China.
Due to its simple process and adaptability to large-area deposition, chemical bath deposition (CBD) is one of the preparation methods for the SnO layer in highly efficient "n-i-p" structured perovskite solar cells (PSCs). However, the residual thioglycolic acid (TGA) on the CBD-SnO surface affects the stability of PSCs and the carrier transport at the CBD-SnO/perovskite interface, hindering the further development of this method. This work demonstrates a method for the reutilization of surface groups to construct molecular bridges.
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