In this study, we use our recently prepared graphene oxide (GO) with an almost intact σ-framework of carbon atoms (ai-GO) to probe the thermal stability of the carbon framework for the first time. Ai-GO exhibits few defects because CO2 formation is prevented during synthesis. Ai-GO was thermally treated before chemical reduction and the resulting defect density in graphene was subsequently determined by statistical Raman microscopy. Surprisingly, the carbon framework of ai-GO is stable in thin films up to 100 °C. Furthermore, we find evidence for an increase in the quality of ai-GO upon annealing at 50 °C before reduction. The carbon framework of GO prepared according to the popular Hummers' method (GO-c) appears to be less stable and decomposition starts at 50 °C, which is qualitatively indicated by CO2-trapping experiments in μm-thin films. Information about the stability of GO is important for storing, processing, and using GO in many applications.
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http://dx.doi.org/10.1002/chem.201304048 | DOI Listing |
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