Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of studies on sensing gases and vapors using SiNW-based devices is increasing. This review gives an overview of selected research papers related to the application of electrical SiNW-based devices in the gas phase that have been reported over the past 10 years. Special attention is given to surface modification strategies and the sensing principles involved. In addition, future steps and technological challenges in this field are addressed.
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http://dx.doi.org/10.3390/s140100245 | DOI Listing |
ChemSusChem
January 2025
Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
Silicon nanowires (SiNWs) have demonstrated great potential for energy storage due to their exceptional electrical conductivity, large surface area, and wide compositional range. Metal-assisted chemical etching (MACE) is a widely used top-down technique for fabricating silicon micro/nanostructures. SiNWs fabricated by MACE exhibit significant surface areas and diverse surface chemistry.
View Article and Find Full Text PDFACS Appl Mater Interfaces
April 2024
School of Electronic Science and Engineering/National Laboratory of Solid-State Microstructures, Nanjing University, 210023, Nanjing, China.
Planar silicon nanowires (SiNWs), grown by using low temperature catalytic approaches, are excellent 1D channel materials for developing high-performance logics and sensors. However, a deterministic position and size control of the metallic catalyst droplets, that lead to the growth of SiNWs, remains still a significant challenge for reliable device integration. In this work, we present a convenient but powerful edge-trimming catalyst formation strategy, which can help to produce a rather uniform single-row of indium (In) catalyst droplets of = 67 ± 5 nm in diameter, with an exact one-droplet-on-one-step arrangement.
View Article and Find Full Text PDFSensors (Basel)
January 2024
Department of Biomedical Engineering, Kyunghee University, Yongin 17104, Republic of Korea.
Silicon nanowires (SiNWs) are emerging as versatile components in the fabrication of sensors for implantable medical devices because of their exceptional electrical, optical, and mechanical properties. This paper presents a novel top-down fabrication method for vertically stacked SiNWs, eliminating the need for wet oxidation, wet etching, and nanolithography. The integration of these SiNWs into body channel communication (BCC) circuits was also explored.
View Article and Find Full Text PDFNanomaterials (Basel)
August 2022
Institute of Nanoscience and Nanotechnology, Universiti Putra Malaysia, Serdang 43400, Selangor, Malaysia.
A highly sensitive silicon nanowire (SiNW)-based sensor device was developed using electron beam lithography integrated with complementary metal oxide semiconductor (CMOS) technology. The top-down fabrication approach enables the rapid fabrication of device miniaturization with uniform and strictly controlled geometric and surface properties. This study demonstrates that SiNW devices are well-aligned with different widths and numbers for pH sensing.
View Article and Find Full Text PDFNanomaterials (Basel)
May 2022
Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
Light/matter interaction of low-dimensional silicon (Si) strongly correlated with its geometrical features, which resulted in being highly critical for the practical development of Si-based photovoltaic applications. Yet, orientation modulation together with apt control over the size and spacing of aligned Si nanowire (SiNW) arrays remained rather challenging. Here, we demonstrated that the transition of formed SiNWs with controlled diameters and spacing from the crystallographically preferred <100> to <110> orientation was realized through the facile adjustment of etchant compositions.
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