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Radical-assisted chemical doping for chemically derived graphene. | LitMetric

Radical-assisted chemical doping for chemically derived graphene.

Nanoscale Res Lett

Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan.

Published: December 2013

Carrier doping of graphene is one of the most challenging issues that needs to be solved to enable its use in various applications. We developed a carrier doping method using radical-assisted conjugated organic molecules in the liquid phase and demonstrated all-wet fabrication process of doped graphene films without any vacuum process. Charge transfer interaction between graphene and dopant molecules was directly investigated by spectroscopic studies. The resistivity of the doped graphene films was drastically decreased by two orders of magnitude. The resistivity was improved by not only carrier doping but the improvement in adhesion of doped graphene flakes. First-principles calculation supported the model of our doping mechanism.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC3878329PMC
http://dx.doi.org/10.1186/1556-276X-8-534DOI Listing

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