Thin ZrO2/Al2O3 films that consisted of alternating monoclinic ZrO2 nanolayers and amorphous Al2O3 nanolayers were deposited on a tool steel substrate using Zr and Al cathodes in a cathodic arc plasma deposition system, and then oxidized at 600-900 degrees C in air for up to 50 h. The ZrO2/Al2O3 films effectively suppressed the oxidation of the substrate up to 800 degrees C by acting as a barrier layer against the outward diffusion of the substrate elements and inward diffusion of oxygen. However, rapid oxidation occurred at 900 degrees C due mainly to the increased diffusion and subsequent oxidation of steel as well as the crystallization of amorphous Al2O3.
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http://dx.doi.org/10.1166/jnn.2013.7901 | DOI Listing |
J Nanosci Nanotechnol
November 2020
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
In this study, the effects of hydrogenation on the dielectric capacitance and leakage current of ZrO₂/Al₂O₃/ZrO₂ (ZAZ) films for dynamic-random-access memory (DRAM) capacitors were examined. Hydrogen permeation into ZAZ films reduced the dielectric capacitance and increased the leakage current with continued exposure to hydrogen during the forming gas annealing process. More specifically, the hydrogen ions distributed in the grain boundaries and at the Z/A interfaces appeared to disrupt the dipole motion and diminish the dielectric constant of the film, resulting in a decreased dielectric capacitance.
View Article and Find Full Text PDFJ Nanosci Nanotechnol
November 2013
Department of Materials Science and Engineering, Myongji University, Yongin, 449-728, South Korea.
Thin ZrO2/Al2O3 films that consisted of alternating monoclinic ZrO2 nanolayers and amorphous Al2O3 nanolayers were deposited on a tool steel substrate using Zr and Al cathodes in a cathodic arc plasma deposition system, and then oxidized at 600-900 degrees C in air for up to 50 h. The ZrO2/Al2O3 films effectively suppressed the oxidation of the substrate up to 800 degrees C by acting as a barrier layer against the outward diffusion of the substrate elements and inward diffusion of oxygen. However, rapid oxidation occurred at 900 degrees C due mainly to the increased diffusion and subsequent oxidation of steel as well as the crystallization of amorphous Al2O3.
View Article and Find Full Text PDFJ Nanosci Nanotechnol
November 2007
Terahertz Devices Team, Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, Korea.
Nanocomposite ZrO2/Al2O3 (ZAO) films were deposited on Si by plasma-enhanced atomic layer deposition and the film characteristics including interfacial oxide formation, dielectric constant (k), and electrical breakdown strength were investigated without post-annealing process. In both the mixed and nano-laminated ZAO films, the thickness of the interfacial oxide layer (T(IL)) was considerably reduced compared to ZrO2 and Al2O3 films. The T(IL) was 0.
View Article and Find Full Text PDFSpectrochim Acta A Mol Biomol Spectrosc
February 2000
Department of Chemistry, University of Otago, Dunedin, New Zealand.
In situ infrared spectroscopy has been used to investigate the adsorption of a range of simple aromatic carboxylic acids from aqueous solution to metal oxides. Thin films of TiO2, ZrO2, Al2O3 and Ta2O5 were prepared by evaporation of aqueous sols on single reflection ZnSe prisms. Benzoic acid adsorbed very strongly to ZrO2, in a bridging bidentate fashion, but showed only weak adsorption to TiO2 and Ta2O5.
View Article and Find Full Text PDFPhys Rev B Condens Matter
December 1988
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