In this study, three different crystalline states of silicon were prepared to be doped with phosphorous by IMD, amorphous, poly crystalline and single crystalline silicon. The dose was controlled by IMD duration time and heat treatment for electrical activation was done in RTA and Furnace. In case of RTA, annealing temperature was controlled by the duration time of power application. In case of a single crystal substrate, the resistance was measured to be 20-50 omega/square depending on the dose and annealing temperature. In case of poly crystal, we could observe segregation of the dopant at grain boundaries, which caused increase of the resistance with increase of annealing temperature. In case of amorphous silicon thin film, this phenomenon could not be observed due to lack of the grain boundaries and the minimum resistance of this work was about 300 omega/square, which was about the same to that in a poly silicon thin film.
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