AI Article Synopsis
- The study measures resonant Auger electron spectra of Cl3SiSi(CH3)3 using electron spectroscopy combined with undulator radiation, focusing on Si 1s photoexcitation.
- The highest intensity transition involves a Si 1s electron being excited into a vacant valence orbital, leading to resonant Auger decay where the electron remains in that orbital.
- The results reveal complexities in Auger decay processes, including transformations due to electron interactions and overlapping Rydberg orbitals, helping clarify properties of excited states that are not evident from total ion yield measurements alone.
Article Abstract
Spectator resonant Auger electron spectra with the Si 1s photoexcitation of Cl3SiSi(CH3)3 have been measured using an electron spectroscopic technique combined with undulator radiation. The transition with the highest intensity in the total ion yield (TIY) spectrum, coming from excitation of a Si 1s electron on the Cl-side into a vacant valence orbital, generates the resonant Auger decay in which the excited electron remains in this valence orbital. Photoexcitation of 1s electrons into some Rydberg orbitals induces Auger shake-down transitions, because higher-lying Rydberg orbitals in the two Si atoms closely positioned hold spatially overlapping considerably. A broad TIY peak slightly above the 1s ionization thresholds appreciably yields resonant Auger decays in which a slow photoelectron is re-captured into a higher-lying Rydberg orbital. The normal Auger peak shape at this photon energy is distorted due to a post-collision interaction effect. These findings provide a clear understanding on properties of the excited orbitals which are ambiguous in the measurement of the TIY only.
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| http://dx.doi.org/10.1063/1.4827860 | DOI Listing |
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