Chemical solution deposition (CSD) provides a low-cost, versatile approach for processing of thin and ultrathin ferroelectric films, as well as short and high aspect ratio ferroelectric nanostructures. This review discusses the state of the art in the processing of ferroelectric oxide thin films and nanostructures by CSD, with special emphasis on nucleation and growth phenomena. The effects of choice of precursor solution, substrate and bottom electrode stack, and thermal treatment conditions on the nucleation and growth are examined. Furthermore, methods to control ferroelectric thin film's microstructure, including phase content, texture, grain size and chemical homogeneity, are reviewed. Lastly, current CSD-based methods for processing of ferroelectric oxide nanostructures are presented with special consideration of the structural development, as well as advantages and shortcomings associated with each method. Lead zirconate-titanate, Pb(ZrxTi1-x)O3 (PZT), and barium titanate, BaTiO3 (BT), are used throughout the discussion, as specific examples for CSD processing of perovskite ferroelectrics.
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http://dx.doi.org/10.1039/c3cs60250h | DOI Listing |
J Colloid Interface Sci
January 2025
College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, Guangdong 518060, PR China; Guangdong Flexible Wearable Energy and Tools Engineering Technology Research Centre, Shenzhen University, Shenzhen 518060, PR China. Electronic address:
Altering the electron distribution within a catalyst to manipulate internal charge migration pathways is an effective strategy for achieving high efficiency in carrier separation and migration, which is essential for the advancement of photocatalytic water oxidation technologies. We have employed atomic layer deposition (ALD) to construct a BiFeO/CuO (BFO/CuO) heterojunction with a specific CuO thickness, resulting in a Z-type junction (BFO/CuO50) characterized by a robust internal electric field. This junction facilitates the spatial separation of charge carriers, thereby enhancing their migration efficiency.
View Article and Find Full Text PDFNano Lett
January 2025
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
Three-dimensional vertically stacked memory is more cost-effective than two-dimensional stacked memory. Vertically stacked memory using ferroelectric materials has great potential not only in high-density memory but also in neuromorphic fields because it secures low voltage and fast operation speed. This paper presents the implementation of a ferroelectric capacitor comprising a vertical two-layer stacked structure composed of a titanium nitride (TiN)/aluminum-doped hafnium oxide/TiN configuration.
View Article and Find Full Text PDFSci Adv
January 2025
State Key Laboratory of Advanced Welding and Joining of Materials and Structures, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China.
Perovskite oxides have a wide variety of physical properties that make them promising candidates for versatile technological applications including nonvolatile memory and logic devices. Chemical tuning of those properties has been achieved, to the greatest extent, by cation-site substitution, while anion substitution is much less explored due to the difficulty in synthesizing high-quality, mixed-anion compounds. Here, nitrogen-incorporated BaTiO thin films have been synthesized by reactive pulsed-laser deposition in a nitrogen growth atmosphere.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Materials Science, National Engineering Lab for TFT-LCD Materials and Technologies, Fudan University, Shanghai 200433, China.
Tactile sensation and recognition in the human brain are indispensable for interaction between the human body and the surrounding environment. It is quite significant for intelligent robots to simulate human perception and decision-making functions in a more human-like way to perform complex tasks. A combination of tactile piezoelectric sensors with neuromorphic transistors provides an alternative way to achieve perception and cognition functions for intelligent robots in human-machine interaction scenarios.
View Article and Find Full Text PDFNature
January 2025
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
Proximity ferroelectricity is an interface-associated phenomenon in electric-field-driven polarization reversal in a non-ferroelectric polar material induced by one or more adjacent ferroelectric materials. Here we report proximity ferroelectricity in wurtzite ferroelectric heterostructures. In the present case, the non-ferroelectric layers are AlN and ZnO, whereas the ferroelectric layers are AlBN, AlScN and ZnMgO.
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