Layers of poly(methyl methacrylate) doped with the Eu complex Eu(DPEPO)(hfac)3 (EuDH) provide a means for down-shifting incident ultraviolet (UV) light into the visible range, with beneficial effects on the performance of solar cells, as demonstrated with thin-film InGaP devices formed by epitaxial liftoff. Experimental and computational results establish important aspects of gain and loss mechanisms in the UV range. Measurements show that InGaP cells with coatings of EuDH doped PMMA exhibit enhanced currents (8.68 mA cm(-2)) and power conversion efficiencies (9.48%), both due to increased responses at wavelengths between 300-360 nm.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1039/c3cp54096k | DOI Listing |
For the initial instance, oxygen deficiency-enriched vanadium pentoxide (O─VO@500) thin film electrodes are tuned by the Pulsed Laser Ablation technique. The O─VO@500 thin film electrode shows remarkable electrochemical performances confirming the greater potential window of -0.4 to 0.
View Article and Find Full Text PDFAdv Sci (Weinh)
February 2023
Swiss Light Source, Paul Scherrer Institute, Villigen-PSI, 5232, Switzerland.
Pb(Zr,Ti)O (PZT) is the most common ferroelectric (FE) material widely used in solid-state technology. Despite intense studies of PZT over decades, its intrinsic band structure, electron energy depending on 3D momentum k, is still unknown. Here, Pb(Zr Ti )O using soft-X-ray angle-resolved photoelectron spectroscopy (ARPES) is explored.
View Article and Find Full Text PDFNano Lett
August 2022
State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.
Ultrathin films of intrinsic magnetic topological insulator MnBiTe exhibit fascinating quantum properties such as the quantum anomalous Hall effect and the axion insulator state. In this work, we systematically investigate the evolution of the electronic structure of MnBiTe thin films. With increasing film thickness, the electronic structure changes from an insulator type with a large energy gap to one with in-gap topological surface states, which is, however, still in drastic contrast to the bulk material.
View Article and Find Full Text PDFACS Nano
February 2022
Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Drive, La Jolla, California 92093, United States.
A cost-effective, vacuum-free, liquid-metal-printed two-dimensional (2D) (∼1.9 nm-thick) tin-doped indium oxide (ITO) thin-film transistor (TFT) was developed at the maximum process temperature of 200 °C. A large-sized 2D-ITO channel layer with an electron density of ∼1.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2022
Advanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany.
Hafnium oxide plays an important role as a dielectric material in various thin-film electronic devices such as transistors and resistive or ferroelectric memory. The crystallographic and electronic structure of the hafnia layer often depends critically on its composition and defect structure. Here, we report two novel defect-stabilized polymorphs of substoichiometric HfO with semiconducting properties that are of particular interest for resistive switching digital or analog memory devices.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!