Zinc oxide (ZnO) mat-based conductometric devices were fabricated using a thermal oxidation technique. A metallic zinc layer was deposited on the alumina transducer and then oxidized in a controlled atmosphere, in order to obtain ZnO nanostructures. Two different batches of sensors have been prepared, and their sensing performances have been evaluated towards oxidizing and reducing gases. Functional measurements showed very good sensing performances towards ethanol and acetone at 500 °C, and NO2 at 200 °C, indirectly confirming the n-type behaviour of the material. The influence of the humidity on the response has been explored. In practical conditions the interference of humidity is very small, and could be neglected in many applications. Simultaneous measurements on different devices from the same batch confirm the high reproducibility of the response within the batch.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1088/0957-4484/24/44/444008 | DOI Listing |
Nano Lett
January 2025
School of Light Industry and Chemical Engineering, Dalian Polytechnic University, Dalian, Liaoning 116034, China.
Layered VO·6HO is a promising candidate for aqueous zinc batteries (AZBs) but with moderate electrochemical performances. Herein, the charge storage properties of VO·6HO are markedly improved by building up the heterointerface on its surface using amorphous molybdenum trioxide as the heteromaterial. The amorphous molybdenum trioxide functioning as the proton reservoir enables the proton-involved electrochemical reactions and induces the formation of a built-in electric field along the [001] orientation at the heterointerface constructed by the (001) plane of VO·6HO, which could provide new diffusion pathways and extra sites for ion storage.
View Article and Find Full Text PDFNat Commun
January 2025
Energy Storage Research Department, Korea Institute of Energy Research (KIER), Daejeon, 34129, Republic of Korea.
Zinc (Zn)-based batteries have been persistently challenged by the critical issue of inhomogeneous zinc deposition/stripping process on substrate surface. Herein, we reveal that zinc electrodeposition behaviors dramatically improved through the introduction of highly zincophilic copper oxide nanoparticles (CuO NPs). Strong electronic redistribution between Zn and CuO explains the high Zn affinity on CuO, with negligible nucleation overpotential.
View Article and Find Full Text PDFJ Food Sci
January 2025
Department of Human Nutrition, Food, and Animal Sciences, University of Hawai'i at Mānoa, Honolulu, Hawai'i, USA.
Freezing extends the shelf life of foods but often leads to structural damage due to ice crystal formation, negatively impacting quality attributes. Oscillating magnetic field (OMF)-assisted supercooling has emerged as a potential technique to overcome these limitations by inhibiting ice nucleation and maintaining foods in a supercooled state. Despite its potential, the effectiveness and underlying mechanisms of OMF-assisted supercooling remain subjects of debate.
View Article and Find Full Text PDFInt J Nanomedicine
January 2025
Key Laboratory of Livestock Infectious Diseases, Ministry of Education, and Key Laboratory of Ruminant Infectious Disease Prevention and Control (East), Ministry of Agriculture and Rural Affairs, College of Animal Science and Veterinary Medicine, Shenyang Agricultural University, Shenyang, 110866, People's Republic of China.
Background: Antibiotic resistance of many bacteria, including Methicillin-resistant (MRSA), has become a major threat to global health. Zinc Oxide Quantum dots (ZnO-QDs) show good antibacterial activity, but most of them are insoluble in water, limiting their application range, and there is a lack of research on drug resistance inducement.
Methods: The water-soluble zinc oxide quantum dots modified by APTES (ZnO@APTES QDs) were prepared by a microwave assisted synthesis.
ACS Omega
January 2025
School of Integrated Technology, Yonsei University, Seoul 03722, Republic of Korea.
We developed a two-transistor, zero-capacitor (2T0C) gain-cell memory featuring a self-aligned top-gate-structured thin-film transistor (TFT) for the first time. The proposed indium tin zinc oxide (ITZO) channel-incorporated architecture was specifically engineered to minimize parasitic capacitance for achieving long-retention 2T0C memory operations. A typical 2T0C structure features five types of parasitic capacitances; however, the proposed SATG design effectively used an essential gate insulator capacitance ( ) and reduced four nonessential capacitances ( , , , and ) to virtually zero.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!