AI Article Synopsis

  • Upconversion processes convert two or more low-energy photons into a higher-energy photon, which could help reduce energy losses in silicon solar cells.
  • Current upconverting materials have low quantum yields, limiting their effectiveness for this application.
  • The authors present a theoretical model and simulation analysis of how photonic structures can enhance upconversion efficiency, showing an increase in luminescence by 3.3 times and quantum yield by 1.8 times at specific irradiance levels.

Article Abstract

In upconversion processes, two or more low-energy photons are converted into one higher-energy photon. Besides other applications, upconversion has the potential to decrease sub-band-gap losses in silicon solar cells. Unfortunately, upconverting materials known today show quantum yields, which are too low for this application. In order to improve the upconversion quantum yield, two parameters can be tuned using photonic structures: first, the irradiance can be increased within the structure. This is beneficial, as upconversion is a non-linear process. Second, the rates of the radiative transitions between ionic states within the upconverter material can be altered due to a varied local density of photonic states. In this paper, we present a theoretical model of the impact of a photonic structure on upconversion and test this model in a simulation based analysis of the upconverter material β -NaYF(4):20% Er(3+) within a dielectric waveguide structure. The simulation combines a finite-difference time-domain simulation model that describes the variations of the irradiance and the change of the local density of photonic states within a photonic structure, with a rate equation model of the upconversion processes. We find that averaged over the investigated structure the upconversion luminescence is increased by a factor of 3.3, and the upconversion quantum yield can be improved in average by a factor of 1.8 compared to the case without the structure for an initial irradiance of 200 Wm(-2).

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http://dx.doi.org/10.1364/OE.21.00A883DOI Listing

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