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Voltage-Controlled ON-OFF-Switching of Magnetoresistance in FeO/Fe/Au Aerogel Networks.
ACS Mater Au
January 2024
Electrochemical Sensors and Energy Storage, Faculty of Natural Sciences, Institute of Chemistry, TU Chemnitz, Strasse der Nationen 62, Chemnitz 09111, Germany.
Voltage control of magnetoresistance (MR) in nanoscale three-dimensional (3D) geometries is interesting from a fundamental point of view and a promising route toward novel sensors and energy-efficient computing schemes. Magneto-ionic mechanisms are favorable for low-voltage control of magnetism and room-temperature operation, but magneto-ionic control of MR has been studied only for planar geometries so far. We synthesize a 3D nanomaterial with magneto-ionic functionality by electrodepositing an iron hydroxide/iron coating on a porous nanoscale gold network (aerogel).
View Article and Find Full Text PDFInvestigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario.
Micromachines (Basel)
May 2021
National ASIC System Engineering Center, Southeast University, Nanjing 210096, China.
Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin.
View Article and Find Full Text PDFGiant spin signals in chemically functionalized multiwall carbon nanotubes.
Sci Adv
July 2020
Université de Paris, Laboratoire Matériaux et Phénomènes Quantiques, CNRS, UMR 7162, 75013 Paris, France.
Transporting quantum information such as the spin information over micrometric or even millimetric distances is a strong requirement for the next-generation electronic circuits such as low-voltage spin-logic devices. This crucial step of transportation remains delicate in nontopologically protected systems because of the volatile nature of spin states. Here, a beneficial combination of different phenomena is used to approach this sought-after milestone for the beyond-Complementary Metal Oxide Semiconductor (CMOS) technology roadmap.
View Article and Find Full Text PDFLow-voltage magnetoresistance in silicon.
Nature
September 2013
Beijing National Center for Electron Microscopy, Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
Extending the GMR current measurement range with a counteracting magnetic field.
Sensors (Basel)
June 2013
Division of Building Science and Technology, City University of Hong Kong, Hong Kong.
Traditionally, current transformers are often used for current measurement in low voltage (LV) electrical networks. They have a large physical size and are not designed for use with power electronic circuits. Semiconductor-based current sensing devices such as the Hall sensor and Giant Magnetoresistive (GMR) sensor are advantageous in terms of small size, high sensitivity, wide frequency range, low power consumption, and relatively low cost.
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