There has been much recent interest in the application of plasmonics to improve the efficiency of silicon solar cells. In this paper we use finite difference time domain calculations to investigate the placement of hemispherical gold nanoparticles on the rear surface of a silicon solar cell. The results indicate that nanoparticles protruding into the silicon, rather than into air, have a larger scattering efficiency and diffuse scattering into the semiconductor. This finding could lead to improved light trapping within a thin silicon solar cell device.
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http://dx.doi.org/10.1088/0957-4484/24/41/415402 | DOI Listing |
Nanomaterials (Basel)
December 2024
Dipartimento di Chimica "Ugo Schiff", Università degli Studi di Firenze, Via della Lastruccia 3, 50019 Sesto Fiorentino, Italy.
In this study, we investigate the electrodeposition of various metals on silicon. Mn, Co, Ni, Ru, Pd, Rh, and Pt were identified as promising candidates for controlled electrodeposition onto silicon. Electrochemical evaluations employing cyclic voltammetry, Scanning Electron Microscopy (SEM) associated with energy-dispersive X-Ray Spectroscopy (SEM-EDS), and X-Ray Photoelectron Spectroscopy (XPS) techniques confirmed the deposition of Pd, Rh, and Pt as nanoparticles.
View Article and Find Full Text PDFRSC Adv
December 2024
School of Materials Science and Engineering, Gwangju Institute of Science and Technology 123 Cheomdangwagi-ro, Buk-gu Gwangju 61005 Republic of Korea
Photoelectrochemical water splitting is a promising technology for converting solar energy into chemical energy. For this system to be practically viable, the materials and processes employed for photoelectrode fabrication should be cost-effective and scalable. Herein, we report the large-scale fabrication of nickel oxide-coated n-type silicon (n-Si) photoanodes chemical bath deposition for efficient photoelectrochemical water oxidation.
View Article and Find Full Text PDFAdv Mater
December 2024
Research Laboratory of Electronics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA.
Singlet exciton fission has the potential to increase the efficiency of crystalline silicon solar cells beyond the conventional single junction limit. Perhaps the largest obstacle to achieving this enhancement is uncertainty about energy coupling mechanisms at the interfaces between silicon and exciton fission materials such as tetracene. Here, the previously reported silicon-hafnium oxynitride-tetracene structure is studied and a combination of magnetic-field-dependent silicon photoluminescence measurements and density functional theory calculations is used to probe the influence of the interlayer composition on the triplet transfer process across the hafnium oxynitride interlayer.
View Article and Find Full Text PDFSmall
December 2024
Institute of Photoelectronic Thin Film Devices and Technology, Renewable Energy Conversion and Storage Center, State Key Laboratory of Photovoltaic Materials and Cells, Nankai University, Tianjin, 300350, P. R. China.
Photovoltaic-driven electrochemical (PV-EC) carbon dioxide reduction (COR) coupled with sulfide oxidation (SOR) can efficiently convert the solar energy into chemical energy, expanding its applications. However, developing low-cost electrocatalysts that exhibit high selectivity and efficiency for both COR and SOR remains a challenge. Herein, a bifunctional copper selenide catalyst is developed with copper vacancies (v-CuSe) for the COR-SOR.
View Article and Find Full Text PDFACS Omega
December 2024
Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, China.
Silicon heterojunction (SHJ) solar cells, as one of the most promising passivated contact solar cell technologies of the next generation, have the advantages of high conversion efficiency, high open-circuit voltage, low-temperature coefficient, and no potential-induced degradation. For the single-side rear-emitter SHJ solar cells, the n-type carrier selective layer, which serves as the light-incident side, plays a pivotal role in determining the performance of heterojunction devices. Consequently, a superior n-doped layer should exhibit high optical transmittance and minimal optical absorption, along with a substantial effective doping level to guarantee the formation of dark conductivity (σ) and electron-transport capacity.
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