Growth of large-scale boron nanowire patterns with identical base-up mode and in situ field emission studies of individual boron nanowire.

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Address State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, PR China; Inorganic Nanostructured Materials Group, MANA, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan.

Published: February 2014

Boron nanowires (BNWs) are considered as an ideal optoelectronic nanomaterial, but controlling them in identical growth mode and large-area patterns is technically challenging. Here, large-scale BNW patterns with a uniform base-up growth mode are successfully fabricated by choosing Ni film as the catalyst. Moreover, they exhibit low turn-on field (4.3 V/μm) and excellent field emission uniformity (88%).

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http://dx.doi.org/10.1002/smll.201301948DOI Listing

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