AI Article Synopsis
- The study explores the growth of GaAs/GaAs(x)Sb(1-x) core-shell nanowires on Si(111) substrates using molecular beam epitaxy, focusing on varying the Sb-content in the shells from 10% to about 70%.
- The growth process achieves successful integration of the GaAs core's crystal structure into the GaAs(x)Sb(1-x) shells, which are formed in both zinc blende (ZB) and wurtzite (WZ) crystal structures.
- Results show morphological and structural characteristics that highlight a slower growth rate for the shells on WZ segments compared to ZB segments.
Article Abstract
We have investigated the growth of self-catalyzed GaAs/GaAs(x)Sb(1-x) core-shell nanowires directly on Si(111) substrates by molecular beam epitaxy. The compositions of the GaAs(x)Sb(1-x) shells are tuned in a wide range where the Sb-content is varied from 10 to ~70%, covering the miscibility gap. In addition, the GaAs(x)Sb(1-x) shells are grown on both zinc blende (ZB) and wurtzite (WZ) crystal structures. Morphological and structural characterizations of the grown nanowires indicate successful transfer of the GaAs core crystal structure to the GaAs(x)Sb(1-x) shells for both ZB and WZ nanowires, with slower shell growth rate on the WZ segments.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1088/0957-4484/24/40/405601 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!