Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1001/archopht.1990.01070110023004 | DOI Listing |
ACS Nano
January 2025
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.
Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high-temperature stability, high breakdown voltage, wide bandgap, and high mechanical strength are accompanied by a chemical inertness, which makes complex micromachining difficult. Photoelectrochemical (PEC) etching is a simple, rapid means of wet processing SiC, including the use of dopant-selective etch stops that take advantage of the mature SiC homoepitaxy.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
Massachusetts Institute of Technology, Research Laboratory of Electronics, Cambridge, Massachusetts 02139, USA.
Classical transport of electrons and holes in nanoscale devices leads to heating that severely limits performance, reliability, and efficiency. In contrast, recent theory suggests that interband quantum tunneling and subsequent thermalization of carriers with the lattice results in local cooling of devices. However, internal cooling in nanoscale devices is largely unexplored.
View Article and Find Full Text PDFWe detail here the general principle of a self-adaptive oscillator in which the intertwined operation of a 100-m-long active optical resonator and a standard semiconductor laser mutually coupled by stimulated Brillouin scattering offers an ultimate high spectral purity. Single frequency operation of this self-adaptive photonic oscillator is achieved without any servo locking or stabilization electronics. In free running operation, this principle leads to a Lorentzian linewidth of 40 mHz and a Flicker noise linewidth of 200 Hz for 0.
View Article and Find Full Text PDFSci Rep
January 2025
Departament de Fisica de la Materia Condensada, University of Barcelona, Marti i Franquès 1, 08028, Barcelona, Spain.
We present a nonlinear model of thermal field emission in resonant tunneling nanostructures with multiple barriers and potential wells, based on an accurate determination of the quantum potential shape and a rigorous solution of the Schrödinger equation, while considering thermal balance. The model applies to vacuum and semiconductor resonant tunnel diode and triode structures with two and three electrodes and to the general case of two-way tunneling with electrode heating. The complete balance of heat release and transfer is accounted for, with heat transport considered ballistic.
View Article and Find Full Text PDFLasers Med Sci
January 2025
University of Zurich, Zurich, Switzerland.
The aim of this study was to compare the effectiveness of different types of low level laser treatment (LLLT) in reducing pain levels, changing oxygen saturation and bite force in patients with myofacial pain syndrome (MPS). 45 patients were randomly assigned to three groups: Group 1 (GRR laser, n = 15) received LLLT with Gallium-Aluminium-Arsenide (GaAlAs) diode laser with a wavelength of 904 nm and red laser with a wavelength of 650 nm over masseter muscle region. Group 2 (Nd: YAG laser, n = 15) were treated with Neodymium-doped Yttrium Aluminium Garnet laser with a wavelength of 1064 nm and the same protocol with Nd: YAG laser was performed in the Group 3 (placebo, n = 15) using sham device.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!