This paper details the use of scanning photocurrent microscopy to examine localized current collection efficiency of thin-film photovoltaic devices with in-plane patterning at a submicrometer length scale. The devices are based upon two interdigitated comb electrodes at the micrometer length scale prepatterned on a substrate, with CdSe electrodeposited on one electrode and CdTe deposited over the entire surface of the resulting structure by pulsed laser deposition. Photocurrent maps provide information on what limits the performance of the windowless CdSe/CdTe thin-film photovoltaic devices, revealing "dead zones" particularly above the electrodes contacting the CdTe which is interpreted as recombination over the back contact. Additionally, the impact of ammonium sulfide passivation is examined, which enables device efficiency to reach 4.3% under simulated air mass 1.5 illumination.
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