We confirmed the coverage dependent variation of tautomers of 2-mercaptothiazoline (the thiolate and thione forms) adsorbed on the Ge(100) surface under UHV conditions by using HRXPS measurements in conjunction with the DFT calculation method, which was studied before only in aqueous systems. The C 1s, S 2p, and N 1s core-level spectra obtained using HRXPS revealed the simultaneous presence of two distinct adsorption structures in different proportions at both low (0.15 ML) and high (0.65 ML) coverages. Moreover, we modelled the adsorption structures and geometric configurations of the bond states of 2-mercaptothiazoline on the Ge(100) surface by using the DFT calculation method, and found that the S dative bonded structure is the most stable adsorption structure for the thione form of 2-mercaptothiazoline and that the S-H dissociated-N dative bonded structure is the most stable adsorption structure for the thiolate form.
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http://dx.doi.org/10.1039/c3cp52760c | DOI Listing |
Sci Rep
May 2023
Department of Chemistry, Yeungnam University, Daehak-ro 280, Gyeongsan, Gyeongbuk, 38541, Republic of Korea.
The adsorption behavior of furan on the Ge(100) surface was studied using a combination of high-resolution photoemission spectroscopy (HRPES) and density functional theory (DFT) calculations. We identified the two adsorption species produced by the [4 + 2] cycloaddition and deoxygenation reactions of furan with the Ge(100) surface in a ratio of approximately 76:24 at the surveyed coverages, via an analysis of the binding energies and relative area proportions of all the peaks in the C 1s and O 1s core-level spectra. The DFT simulation results revealed that the [4 + 2] cycloaddition and deoxygenation adducts are thermodynamically preferred by the reaction of furan with the Ge(100) surface compared with others, which is consistent with the HRPES results.
View Article and Find Full Text PDFACS Mater Au
March 2022
Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland.
Properties of Ge oxides are significantly different from those of widely used Si oxides. For example, the instability of GeO at device junctions causes electronic defect levels that degrade the performance of Ge-containing devices (e.g.
View Article and Find Full Text PDFChemphyschem
August 2021
Department of Chemistry, Yeungnam University, Daehak-ro 280, Gyeongsan, Gyeongbuk, 38541, Republic of Korea.
The reaction pathways of 1-propanethiol, 1-propanol, and propylamine molecules, containing a propyl moiety, on a Ge(100) surface were investigated using high-resolution photoemission spectroscopy (HRPES) experiments and density functional theory (DFT) calculations. Upon analysis of the HRPES data, the adsorption of 1-propanethiol and 1-propanol was found to occur through a dissociation reaction, whereas that of propylamine took place via N dative bonding at room temperature. On the basis of our DFT results, adsorption geometries and transition states for each of these molecules on the Ge(100) surface were confirmed.
View Article and Find Full Text PDFPhys Chem Chem Phys
November 2020
Department of Sciences and Methods for Engineering, University of Modena e Reggio Emilia, 42122 Reggio Emilia, Italy.
We combine density functional theory and many body perturbation theory to investigate the electronic properties of Si(100) and Ge(100) surfaces terminated with halogen atoms (-I, -Br, -Cl, -F) and other chemical functionalizations (-H, -OH, -CH3) addressing the absolute values of their work function, electronic affinity and ionization potential. Our results point out that electronic properties of functionalized surfaces strongly depend on the chemisorbed species and much less on the surface crystal orientation. The presence of halogens at the surface always leads to an increment of the work function, ionization potential and electronic affinity with respect to fully hydrogenated surfaces.
View Article and Find Full Text PDFACS Omega
September 2020
Department of Chemistry, Yeungnam University, Daehak-ro 280, Gyeongsan, Gyeongbuk 38541, Republic of Korea.
The adsorption structures and reaction mechanism of tetrahydrofuran on a Ge(100) surface were investigated through high-resolution photoemission spectroscopy (HRPES) and density functional theory (DFT) calculations. On the basis of our analysis of the HRPES spectra, two adsorption species consisting of a major Ge-(CH)-O-Ge structure formed via a ring-opening reaction and a minor molecularly adsorbed structure formed via O dative bonding were identified. Our DFT results provided not only the optimized adsorption structures and their corresponding adsorption energies but also the level of the transition state for the pathway from the molecularly adsorbed species to the major adsorption structure.
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