Institute of Materials Science and Engineering, National Central University, No, 300, Jhongda Rd,, Jhongli 32001, Taoyuan, Taiwan.
Published: August 2013
AI Article Synopsis
Article Abstract
This study fabricates the optically active uniform SiGe/Si multiple quantum well (MQW) nanorod and nanodot arrays from the Si0.4Ge0.6/Si MQWs using nanosphere lithography (NSL) combined with the reactive ion etching (RIE) process. Compared to the as-grown sample, we observe an obvious blueshift in photoluminescence (PL) spectra for the SiGe/Si MQW nanorod and nanodot arrays, which can be attributed to the transition of PL emission from the upper multiple quantum dot-like SiGe layers to the lower MQWs. A possible mechanism associated with carrier localization is also proposed for the PL enhancement. In addition, the SiGe/Si MQW nanorod arrays are shown to exhibit excellent antireflective characteristics over a wide wavelength range. These results indicate that SiGe/Si MQW nanorod arrays fabricated using NSL combined with RIE would be potentially useful as an optoelectronic material operating in the telecommunication range.
Nanorod array and planar green-emission InGaN/GaN multi-quantum well (MQW) LEDs were fabricated by lithography, nano-imprinting, and top-down etching technology. The defect-pinning effect of the nanostructure was found for the first time. The ratio of the bright regions to the global area in the panchromatic CL images of green MQW samples increased from 30% to about 90% after nano-fabrication.
Indium gallium nitride (InGaN)-based micro-LEDs (μLEDs) are suitable for meeting ever-increasing demands for high-performance displays owing to their high efficiency, brightness and stability. However, μLEDs have a large problem in that the external quantum efficiency (EQE) decreases with the size reduction. Here we demonstrate a blue InGaN/GaN multiple quantum well (MQW) nanorod-LED (nLED) with high EQE.
On-chip plasmonic circuitry offers a promising route to meet the ever-increasing requirement for device density and data bandwidth in information processing. As the key building block, electrically-driven nanoscale plasmonic sources such as nanoLEDs, nanolasers, and nanojunctions have attracted intense interest in recent years. Among them, surface plasmon (SP) sources based on inelastic electron tunneling (IET) have been demonstrated as an appealing candidate owing to the ultrafast quantum-mechanical tunneling response and great tunability.
School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University Wuxi 214122 China
A nanostructure of InGaN/GaN multiple quantum well (MQW) nanorods (NRs) was fabricated using top-down etching with self-organized nickel (Ni) nanoparticles as masks on the wafer. The optical properties of InGaN/GaN MQW NRs were discussed by experiment and theory from a light absorption perspective. Three-dimensional (3D) optical images of NRs were successfully obtained by confocal laser scanning microscopy (CLSM) for physical observation of the optical phenomenon of InGaN/GaN MQW NRs.
Strain in InGaN/GaN multiple-quantum well (MQW) light emitters was relaxed via nanopatterning using colloidal lithography and top-down plasma etching. Colloidal lithography was performed using Langmuir-Blodgett dip-coating of samples with silica particles (d = 170, 310, 690, 960 nm) and a Cl/N inductively coupled plasma etch to produce nanorod structures. The InGaN/GaN MQW nanorods were characterized using X-ray diffraction (XRD) reciprocal space mapping to quantify the degree of relaxation.
