Flexoelectric effect in the reversal of self-polarization and associated changes in the electronic functional properties of BiFeO(3) thin films.

Adv Mater

Center for Functional Interfaces of Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 151-747, Korea, Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Korea.

Published: October 2013

Flexoelectricity can play an important role in the reversal of the self-polarization direction in epitaxial BiFeO3 thin films. The flexoelectric and interfacial effects compete with each other to determine the self-polarization state. In Region I, the self-polarization is downward because the interfacial effect is more dominant than the flexoelectric effect. In Region II, the self-polarization is upward, because the flexoelectric effect becomes more dominant than the interfacial effect.

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http://dx.doi.org/10.1002/adma.201301601DOI Listing

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