Ultrafast single photon emitting quantum photonic structures based on a nano-obelisk.

Sci Rep

Department of Physics, Graduate School of Nanoscience & Technology (WCU), and KAIST Institute for NanoCentury, KAIST, Daejeon, 305-701, Republic of Korea.

Published: September 2013

A key issue in a single photon source is fast and efficient generation of a single photon flux with high light extraction efficiency. Significant progress toward high-efficiency single photon sources has been demonstrated by semiconductor quantum dots, especially using narrow bandgap materials. Meanwhile, there are many obstacles, which restrict the use of wide bandgap semiconductor quantum dots as practical single photon sources in ultraviolet-visible region, despite offering free space communication and miniaturized quantum information circuits. Here we demonstrate a single InGaN quantum dot embedded in an obelisk-shaped GaN nanostructure. The nano-obelisk plays an important role in eliminating dislocations, increasing light extraction, and minimizing a built-in electric field. Based on the nano-obelisks, we observed nonconventional narrow quantum dot emission and positive biexciton binding energy, which are signatures of negligible built-in field in single InGaN quantum dots. This results in efficient and ultrafast single photon generation in the violet color region.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC3701894PMC
http://dx.doi.org/10.1038/srep02150DOI Listing

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