Recently, several groups have reported spin-dependent thermoelectric effects in magnetic tunnel junctions. In this paper, we present a setup for time-resolved measurements of thermovoltages and thermocurrents of a single micro- to nanometer-scaled tunnel junction. An electrically modulated diode laser is used to create a temperature gradient across the tunnel junction layer stack. This laser modulation technique enables the recording of time-dependent thermovoltage signals with a temporal resolution only limited by the preamplifier for the thermovoltage. So far, time-dependent thermovoltage could not be interpreted. Now, with the setup presented in this paper, it is possible to distinguish different Seebeck voltage contributions to the overall measured voltage signal in the μs time regime. A model circuit is developed that explains those voltage contributions on different sample types. Further, it will be shown that a voltage signal arising from the magnetic tunnel junction can only be observed when the laser spot is directly centered on top of the magnetic tunnel junction, which allows a lateral separation of the effects.
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http://dx.doi.org/10.1063/1.4811130 | DOI Listing |
Phys Chem Chem Phys
January 2025
King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
Employing density functional theory for ground state quantum mechanical calculations and the non-equilibrium Green's function method for transport calculations, we investigate the potential of CdS, ZnS, CdZnS, and ZnCdS as tunnel barriers in magnetic tunnel junctions for spintronics. Based on the finding that the valence band edges of these semiconductors are dominated by p orbitals and the conduction band edges by s orbitals, we show that symmetry filtering of the Bloch states in magnetic tunnel junctions with Fe electrodes results in high tunneling magnetoresistances and high spin-polarized current (up to two orders of magnitude higher than in the case of the Fe/MgO/Fe magnetic tunnel junction).
View Article and Find Full Text PDFNano Lett
January 2025
Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
The ferroelectric tunnel junction (FTJ) is a competitive candidate for post-Moore nonvolatile memories due to its low power consumption and nonvolatility, with its performance being strongly dependent on the conditions for contact between the ferroelectric material and the metal electrode. The development of two-dimensional materials in recent years has offered new opportunities such as functional metal layers, which is challenging for traditional FTJ systems. Here, we introduce the newly discovered ferroelectric metal WTe as the electrode to construct WTe/α-InSe/Au ferroelectric semiconductor junctions.
View Article and Find Full Text PDFACS Nano
January 2025
IBM Almaden Research Center, San Jose 95120-6099, California, United States.
Controlling spin-polarized currents at the nanoscale is of immense importance for high-density magnetic data storage and spin-based logic devices. As electronic devices are miniaturized to the ultimate limit of individual atoms and molecules, electronic transport is strongly influenced by the properties of the individual spin centers and their magnetic interactions. In this work, we demonstrate the precise control and detection of spin-polarized currents through two coupled spin centers at a tunnel junction by controlling their spin-spin interactions.
View Article and Find Full Text PDFACS Nano
January 2025
Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, School of Physics, Advanced Research Institute of Multidisciplinary Science, and School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
Two-dimensional in-plane transition-metal dichalcogenide (TMD) junctions have a range of potential applications in next-generation electronic devices. However, limited by the difficulties in ion implantation on 2D systems, the fabrication of the in-plane TMD junctions still relies on the lateral epitaxy of different materials, which always induces lattice mismatch and interfacial scattering. Here, we report the in-plane TMD junction formed with monolayer (ML) PtTe at the boundary of ML and bilayer graphene on SiC.
View Article and Find Full Text PDFACS Nano
January 2025
Chandra Family Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States.
Spiking neural networks seek to emulate biological computation through interconnected artificial neuron and synapse devices. Spintronic neurons can leverage magnetization physics to mimic biological neuron functions, such as integration tied to magnetic domain wall (DW) propagation in a patterned nanotrack and firing tied to the resistance change of a magnetic tunnel junction (MTJ), captured in the domain wall-magnetic tunnel junction (DW-MTJ) device. Leaking, relaxation of a neuron when it is not under stimulation, is also predicted to be implemented based on DW drift as a DW relaxes to a low energy position, but it has not been well explored or demonstrated in device prototypes.
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