Non-periodic arrangements of nanoscale light scatterers allow for the realization of extremely effective broadband light-trapping layers for solar cells. However, their optimization is challenging given the massive number of degrees of freedom. Brute-force, full-field electromagnetic simulations are computationally too time intensive to identify high-performance solutions in a vast design space. Here we illustrate how a semi-analytical model can be used to quickly identify promising non-periodic spatial arrangements of nanoscale scatterers. This model only requires basic knowledge of the scattering behaviour of a chosen nanostructure and the waveguiding properties of the semiconductor layer in a cell. Due to its simplicity, it provides new intuition into the ideal amount of disorder in high-performance light-trapping layers. Using simulations and experiments, we demonstrate that arrays of nanometallic stripes featuring a limited amount of disorder, for example, following a quasi-periodic or Fibonacci sequence, can substantially enhance solar absorption over perfectly periodic and random arrays.
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http://dx.doi.org/10.1038/ncomms3095 | DOI Listing |
Langmuir
January 2025
Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic.
Black aluminum is a material characterized by high surface porosity due to columnar growth and exhibits unique optical properties that make it attractive for applications such as light trapping, infrared detection, and passive thermal radiation cooling. In this study, we correlate the structural and optical properties of black aluminum by comparing it with conventional reflective aluminum layers. These layers of varying thicknesses were deposited on fused silica substrates, and their optical properties were analyzed.
View Article and Find Full Text PDFMater Horiz
December 2024
Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Zhuhai MUST Science and Technology Research Institute, Macau University of Science and Technology, Taipa 999078, Macau, China.
Capping layers (CPLs) are commonly employed in top-emitting organic light-emitting diodes (TEOLEDs) due to their ability to optimize color purity, enhance external light out-coupling efficiency, and improve device stability. However, the mismatch in refractive index between CPLs and thin film encapsulation (TFE) often induces light trapping. This study introduces a novel approach by combining a low refractive index material, lithium fluoride (LiF), with the traditional TFE material, silicon nitride (SiN), to form a combined CPL (LiF/SiN), resulting in improved light outcoupling and light reflection properties.
View Article and Find Full Text PDFSci Rep
December 2024
Department of Electrical Engineering, College of Engineering, Jouf University, Sakaka, 72388, Saudi Arabia.
We designed an ultra-broadband graphene absorber structure with the applied resonator design based on the Al-AlSb-Cr structure, and a thin effective layer of graphene is inserted. To develop the role of the graphene in solar absorbers, the current structure investigates above 98% for 1500 nm bandwidth and 2800 nm (overall bandwidth) for 93.68%.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2024
Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China.
Silicon photonic devices are key components in optical imaging and sensing for communication, and the development of silicon-based photodetectors with ideal performance in the visible and infrared spectral ranges can promote the application of silicon photonics in various photoelectronic systems. Here, a Au-doped black silicon photodetector was prepared by a femtosecond laser direct writing technique. The conical micro-/nanostructures with different sizes were produced by different laser fluence irradiation.
View Article and Find Full Text PDFACS Appl Mater Interfaces
October 2024
College of Chemical Engineering, Zhejiang University of Technology, Hangzhou 310014, China.
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