We present the design, fabrication and characterization of athermal nano-photonic silicon ring modulators. The athermalization method employs compensation of the silicon core thermo-optic contribution with that from the amorphous titanium dioxide (a-TiO(2)) overcladding with a negative thermo-optic coefficient. We developed a new CMOS-compatible fabrication process involving low temperature RF magnetron sputtering of high-density and low-loss a-TiO(2) that can withstand subsequent elevated-temperature CMOS processes. Silicon ring resonators with 275 nm wide rib waveguide clad with a-TiO(2) showed near complete athermalization and moderate optical losses. Small-signal testing of the micro-resonator modulators showed high extinction ratio and gigahertz bandwidth.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1364/OE.21.013958 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
The monolithic fabrication of passive, nonlinear, and active functionalities on a single chip is highly desired in the wake of the development and commercialization of integrated photonic platforms. However, the co-integration of diverse functionalities has been challenging as each platform is optimized for specific applications, typically requiring different structures and fabrication flows. In this article, we report on a monolithic and complementary metal-oxide-semiconductor CMOS-compatible hybrid wafer-scale photonics platform that is suitable for linear, nonlinear, and active photonics based on moderate confinement 0.
View Article and Find Full Text PDFWe experimentally demonstrate what we believe to be a novel RF interference mitigation technique using a network of low-loss silicon nitride ring resonators. The rings are used for complex (phase and amplitude) line-by-line shaping of higher-order sidebands from an electro-optic modulator to discriminate large and small RF signal input, thereby achieving strong (30 dB) mitigation of a large signal and virtually no mitigation for small signals.
View Article and Find Full Text PDFMicro ring resonators (MRR) based evanescent field biosensors have shown excellent potential in medical diagnostics due to their performance, scalability, and ability to integrate multiple sensors in a small area to detect various biomarkers simultaneously. The quest to improve the performance and feature size of such sensors has led to the development of cutting-edge photonic integrated circuits (PIC). However, chip-scale implementation of readout and data analysis still needs to be addressed adequately.
View Article and Find Full Text PDFAll-Fiber Micro-Ring Resonator Based p-Si/n-ITO Heterojunction Electro-Optic Modulator.
Materials (Basel)
January 2025
State Key Laboratory of Radio Frequency Heterogeneous Integration, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Institute for Advanced Study in Nuclear Energy & Safety, Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
With the rapid advancement of information technology, the data demands in transmission rates, processing speed, and storage capacity have been increasing significantly. However, silicon electro-optic modulators, characterized by their weak electro-optic effect, struggle to balance modulation efficiency and bandwidth. To overcome this limitation, we propose an electro-optic modulator based on an all-fiber micro-ring resonator and a p-Si/n-ITO heterojunction, achieving high modulation efficiency and large bandwidth.
View Article and Find Full Text PDFDesigns of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers.
Micromachines (Basel)
December 2024
School of Electrical and Electronic Engineering, Pusan National University, Busan 46241, Republic of Korea.
We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edges of the junction to quantitively control the effective charge (Q) in the termination structures.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!