Vanadium dioxide (VO2) is a key material for thermochromic smart windows that can respond to environmental temperature and modulate near-infrared irradiation by changing from a transparent state at low temperature to a more reflective state at high temperature, while maintaining visible transmittance. Here, we demonstrate for the first time that the Mott phase transition characteristics in VO2 nanoparticles can be remarkably modified by misfit strains occurring at the epitaxial interface between VO2 and the anatase TiO2 of VO2/TiO2 core-shell particles. The heteroepitaxial growth of the as-synthesized particles followed an unprecedented orientation relationship, and an epitaxial growth mechanism is proposed to explain this behavior. A relatively small theoretical coherent misfit (3-11%) and a moderate heating rate (20 °C·min(-1)) in the preparation of the core-shell structure were critically important from the thermodynamic and kinetic perspectives, respectively. The misfit-induced interfacial strain along the uniaxial cR axis increased the transition temperatures, especially on the cooling portion of the heating-cooling cycle, leading to a notably reduced transition hysteresis loop width (from 23.5 to 12.0 °C). Moreover, the optical band gap was also engineered by the interfacial effect. Such a reduced hysteresis showed a benefit for enhancing a rapid response for energy saving thermochromic smart windows.
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Phys Rev Lett
December 2024
Harish-Chandra Research Institute, A CI of Homi Bhabha National Institute, Chhatnag Road, Jhusi, Allahabad 211019, India.
Pump-probe response of the spin-orbit coupled Mott insulator Sr_{2}IrO_{4} reveals a rapid creation of low-energy optical weight and suppression of three-dimensional magnetic order on laser pumping. Postpump there is a quick reduction of the optical weight but a very slow recovery of the magnetic order-the difference is attributed to weak interlayer exchange in Sr_{2}IrO_{4} delaying the recovery of three-dimensional magnetic order. We suggest that the effect has a very different and more fundamental origin.
View Article and Find Full Text PDFJ Phys Condens Matter
December 2024
Departmet of Physics(MMV), Banaras Hindu University, Varanasi, Varanasi, Uttar Pradesh, 221005, INDIA.
We report a detailed experimental study of the structural, magnetic and electrical properties of La and Ru doped (Sr1-x Lax)2Ir1-xRuxO4 (x= 0.05, 0.15).
View Article and Find Full Text PDFNano Lett
December 2024
Fachbereich Physik, Freie Universität Berlin, 14195 Berlin, Germany.
Charge-density waves (CDWs) are correlated states of matter, in which the electronic density is modulated periodically due to electronic and phononic interactions. Often, CDW phases coexist with other correlated states, such as superconductivity, spin-density waves, or Mott insulators. Controlling CDW phases may, therefore, enable the manipulation of the energy landscape of these interacting states.
View Article and Find Full Text PDFBackground: Due to their anatomical locations, optic pathway gliomas (OPGs) can rarely be cured by resection. Given the importance of preserving visual function, we analyzed radiological and visual acuity (VA) outcomes for the type II RAF inhibitor tovorafenib in the OPG subgroup of the phase 2 FIREFLY-1 trial.
Methods: FIREFLY-1 investigated the efficacy (arm 1, n=77), safety, and tolerability (arms 1/2) of tovorafenib (420 mg/m2 once weekly; 600 mg maximum) in patients with BRAF-altered relapsed/refractory pediatric low-grade glioma (pLGG).
Microsyst Nanoeng
December 2024
Micro- and Nanosystems, Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, 3001, Leuven, Belgium.
Cr-doped VO thin film shows a huge resistivity change with controlled epitaxial strain at room temperature as a result of a gradual Mott metal-insulator phase transition with strain. This novel piezoresistive transduction principle makes Cr-doped VO thin film an appealing piezoresistive material. To investigate the piezoresistivity of Cr-doped VO thin film for implementation in MEMS sensor applications, the resistance change of differently orientated Cr-doped VO thin film piezoresistors with external strain change was measured.
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